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Method for fabricating film bulk acoustic resonator (FBAR) device

  • US 7,128,941 B2
  • Filed: 05/25/2004
  • Issued: 10/31/2006
  • Est. Priority Date: 05/21/2002
  • Status: Expired due to Fees
First Claim
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1. A method of fabricating a film bulk acoustic resonator (FBAR) device, said device comprising a series resonator and a shunt resonator, said method comprising the steps of:

  • (a) preparing a substrate;

    (b) forming an insulating layer on the substrate;

    (c) forming a sacrificial layer on the insulating layer;

    (d) forming a plurality of sacrificial regions by selectively removing the sacrificial layer;

    (e) forming a membrane support layer on the insulating layer with the selectively removed sacrificial layer;

    (f) forming a membrane layer on the sacrificial regions and the membrane support layer;

    (g) forming a plurality of active regions in the membrane layer and on the sacrificial regions so that a thickness of the active region corresponding to the series resonator differs from a thickness of the active region corresponding to the shunt resonator;

    (h) forming lower electrodes on the membrane layer including the active regions;

    (i) forming an piezoelectric layer on the lower electrodes;

    (j) forming upper electrodes on the piezoeleciric layer; and

    (k) forming air-gaps by removing the sacrificial regions;

    wherein the thicknesses of the active regions of the membrane layer are less than those of other regions of the membrane layer.

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