Method for manufacturing semiconductor device
First Claim
1. A method for manufacturing a semiconductor device comprising:
- forming an insulating film having plural projections over a substrate;
forming a first film comprising amorphous semiconductor over the insulating film and at least between the projections;
heating the first film for improving crystallinity of the first film comprising amorphous semiconductor, thereby producing a second film comprising crystalline semiconductor;
etching the second film comprising crystalline semiconductor, thereby forming plural third films comprising crystalline semiconductor;
irradiating the plural third film comprising crystalline semiconductor with a laser beam having a linear shape with changing a position of the substrate relative to the laser beam for improving crystallinity of the plural third films, thereby producing a plural fourth films comprising crystalline semiconductor;
etching the plural fourth films comprising crystalline semiconductor for forming plural fifth films comprising crystalline semiconductor from the plural fourth films; and
forming a circuit comprising plural transistors from at least a part of the plural fifth films comprising crystalline semiconductor,wherein at least the part of the fifth films are obtained from at least two of the fourth films.
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Abstract
A method for manufacturing a semiconductor device having steps of forming an amorphous semiconductor on a substrate having an insulating surface; patterning the amorphous semiconductor to form plural first island-like semiconductors; irradiating a linearly condensed laser beam on the plural first island-like semiconductors while relatively scanning the substrate, thus crystallizing the plural first island-like semiconductors; patterning the plural first island-like semiconductors that have been crystallized to form plural second island-like semiconductors; forming plural transistors using the plural second island-like semiconductors; and forming a unit circuit using a predetermined number of the transistors, where the second island-like semiconductors used for the predetermined number of the transistors are formed from the first island-like semiconductors that are different from each other.
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Citations
9 Claims
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1. A method for manufacturing a semiconductor device comprising:
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forming an insulating film having plural projections over a substrate; forming a first film comprising amorphous semiconductor over the insulating film and at least between the projections; heating the first film for improving crystallinity of the first film comprising amorphous semiconductor, thereby producing a second film comprising crystalline semiconductor; etching the second film comprising crystalline semiconductor, thereby forming plural third films comprising crystalline semiconductor; irradiating the plural third film comprising crystalline semiconductor with a laser beam having a linear shape with changing a position of the substrate relative to the laser beam for improving crystallinity of the plural third films, thereby producing a plural fourth films comprising crystalline semiconductor; etching the plural fourth films comprising crystalline semiconductor for forming plural fifth films comprising crystalline semiconductor from the plural fourth films; and forming a circuit comprising plural transistors from at least a part of the plural fifth films comprising crystalline semiconductor, wherein at least the part of the fifth films are obtained from at least two of the fourth films. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification