Method and structure for forming strained Si for CMOS devices
First Claim
1. A method for manufacturing a device including an n-type device and a p-type device, comprising:
- doping a portion of a semiconductor substrate;
forming a gap in the semiconductor substrate by removing at least a portion of the doped portion of the semiconductor substrate;
depositing a spacer material over portions of the gap; and
growing a strain layer in at least a portion of the gap in the semiconductor substrate.
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Accused Products
Abstract
A method for manufacturing a device including an n-type device and a p-type device. In an aspect of the invention, the method involves doping a portion of a semiconductor substrate and forming a gap in the semiconductor substrate by removing at least a portion of the doped portion of the semiconductor substrate. The method further involves growing a strain layer in at least a portion of the gap in the semiconductor substrate. For the n-type device, the strain layer is grown on at least a portion which is substantially directly under a channel of the n-type device. For the p-type device, the strain layer is grown on at least a portion which is substantially directly under a source region or drain region of the p-type device and not substantially under a channel of the p-type device.
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Citations
21 Claims
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1. A method for manufacturing a device including an n-type device and a p-type device, comprising:
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doping a portion of a semiconductor substrate; forming a gap in the semiconductor substrate by removing at least a portion of the doped portion of the semiconductor substrate; depositing a spacer material over portions of the gap; and growing a strain layer in at least a portion of the gap in the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method for manufacturing a device including an n-type device and a p-type device, comprising:
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growing a first strain layer on a semiconductor substrate; growing a silicon aver above the first strain layer; forming a gap between the semiconductor substrate and the silicon layer by removing at least a portion of the silicon layer and the first strain layer from above the semiconductor substrate; and growing a second strain layer in the gap, wherein the second strain layer is grown on at least a portion which is substantially directly under a channel of the n-type device.
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21. A method for manufacturing a device including an n-type device and a p-type device, comprising:
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growing a first strain layer on a semiconductor substrate; growing a silicon layer above the first strain layer; forming a gap between the semiconductor substrate and the silicon layer by removing at least a portion of the silicon layer and the first strain layer from above the semiconductor substrate; and growing a second strain layer in the gap, wherein the second strain layer is grown on at least a portion which is substantially directly under at least one of a source region or drain region of the p-type device.
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Specification