Method and structure of memory element plug with conductive Ta removed from sidewall at region of memory element film
First Claim
1. A method for fabricating a memory element comprising:
- forming a diffusion barrier layer over an opening formed in a dielectric layer of a semiconductor substrate;
depositing an electrode material into the opening;
recessing a portion of the electrode material from the opening to expose a portion of the diffusion barrier layer using a wet etch;
oxidizing the exposed portion of the diffusion barrier layer;
forming memory element films over the electrode material, the memory element films comprising a passive layer and an active layer; and
forming a top electrode over the memory element films.
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Accused Products
Abstract
Disclosed are methods and structures for fabrication of reliable and efficient memory cells. The methods involve formation of a conformal diffusion barrier layer in a via, deposition of an electrode material in the via, removal of a certain portion of the electrode material from the via to expose a the portion of the diffusion barrier layer, converting the exposed portion of the diffusion barrier layer into an oxide, forming a memory element film, and forming and patterning a top electrode. Improved electrical conduction and data retention from the memory element of a memory cell by preventing short circuits and leakage of current through the conductive diffusion barrier layer, and thereby enhanced reliability and performance of a memory cell are obtained.
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Citations
22 Claims
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1. A method for fabricating a memory element comprising:
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forming a diffusion barrier layer over an opening formed in a dielectric layer of a semiconductor substrate; depositing an electrode material into the opening; recessing a portion of the electrode material from the opening to expose a portion of the diffusion barrier layer using a wet etch; oxidizing the exposed portion of the diffusion barrier layer; forming memory element films over the electrode material, the memory element films comprising a passive layer and an active layer; and forming a top electrode over the memory element films. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A memory cell comprising:
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a bottom electrode; a memory element film over the bottom electrode; a top electrode over the memory element film; a thin conductive metal barrier layer between the memory element film and the top electrode, the thin conductive barrier layer having a thickness from about 10 Å
to about 200 Å
, anda diffusion barrier layer at least partially surrounding the bottom electrode, the memory element film, the thin conductive metal barrier layer, and the top electrode, wherein the diffusion barrier layer adjacent the memory element film and the top electrode comprises an oxidized diffusion barrier metal. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. A memory cell comprising:
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a bottom electrode; a memory element film over the bottom electrode, wherein the memory element film comprises a passive layer and an active layer, the passive layer comprising copper sulfide; a top electrode over the memory element film, and a diffusion barrier layer at least partially surrounding the bottom electrode, the memory element film, and the top electrode, wherein the diffusion barrier layer adjacent the memory element film and the top electrode comprises an oxidized diffusion barrier metal.
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Specification