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Method and structure of memory element plug with conductive Ta removed from sidewall at region of memory element film

  • US 7,129,133 B1
  • Filed: 09/13/2004
  • Issued: 10/31/2006
  • Est. Priority Date: 09/13/2004
  • Status: Active Grant
First Claim
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1. A method for fabricating a memory element comprising:

  • forming a diffusion barrier layer over an opening formed in a dielectric layer of a semiconductor substrate;

    depositing an electrode material into the opening;

    recessing a portion of the electrode material from the opening to expose a portion of the diffusion barrier layer using a wet etch;

    oxidizing the exposed portion of the diffusion barrier layer;

    forming memory element films over the electrode material, the memory element films comprising a passive layer and an active layer; and

    forming a top electrode over the memory element films.

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