Wire-bondable image sensor having integral contaminant shadowing reduction structure

• US 7,129,459 B2
• Filed: 12/23/2004
• Issued: 10/31/2006
• Est. Priority Date: 12/23/2004
• Status: Active Grant

• Current Assignee: Aptina Imaging Corporation (ON Semiconductor Corporation)
• Original Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Inventors: Afshari, Bahram, Hartlove, Jason, Ma, Guolin
• Primary Examiner(s): PYO, KEVIN K
• Application Number:
  US11/022,116
• Publication Number:
  US 20060138304A1
• Time in Patent Office: 677 Days
• Field of Search: 250/208.1, 250/216, 250/226, 257/432, 257/433, 257/435
• US Class Current: 250/208.1
• CPC Class Codes: H01L 27/1462 Coatings
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements

Abstract

A wire-bondable image sensor having an integral contaminant shadowing reduction structure is described. In one aspect, an image sensor includes a substrate that has a side supporting at least one imaging area and at least one wirebonding area. Light detectors are constructed and arranged to receive light through the imaging area. Bond pads are exposed in the wirebonding area for connecting to respective bond wires. A contaminant shadowing reduction structure on the imaging area has an exposed contaminant displacement surface over the imaging area and separated from the imaging area by a distance of at least 300 μm. The contaminant shadowing reduction structure is substantially transparent to radiation within an operative wavelength range specified for the image sensor. Methods of making the above-mentioned image sensor also are described.

Claims

1. An image sensor, comprising:

a substrate having a side supporting at least one imaging area and at least one wirebonding area;

light detectors constructed and arranged to receive light through the imaging area;

bond pads exposed in the wirebonding area for connecting to respective bond wires; and

a contaminant shadowing reduction structure on the imaging area having an exposed contaminant displacement surface over the imaging area and separated from the imaging area by a distance of at least 300 μ

m, wherein the contaminant shadowing reduction structure comprises organic material that has a thickness of at least 200 μ

m and is substantially transparent to radiation within an operative wavelength range specified for the image sensor, the organic material having dispersed therein at least one infrared light absorbing dye and being patterned so that the bond pads are free of any overlying portions of the organic material.

2. The image sensor of claim 1, wherein the organic material comprises a cured epoxy resin.

3. The image sensor of claim 1, wherein the organic material comprises a cross-linked photoresist layer.

6. The image sensor of claim 1, wherein the organic material comprises a cured epoxy resin layer and the contaminant shadowing reduction structure comprises a glass layer attached to the imaging area by the cured epoxy resin layer.

7. The image sensor of claim 6, wherein the epoxy resin layer comprises at least one infrared light absorbing dye dispersed therein and has a thickness of at least 200 μ

m.

8. The image sensor of claim 7, wherein the glass layer has a thickness of at least 500 μ

m.

4. An image sensor, comprising:

a substrate having a side supporting at least one imaging area and at least one wirebonding area;

light detectors constructed and arranged to receive light through the imaging area;

bond pads exposed in the wirebonding area for connecting to respective bond wires; and

a contaminant shadowing reduction structure on the imaging area having an exposed contaminant displacement surface over the imaging area and separated from the imaging area by a distance of at least 300 μ

m, wherein the contaminant shadowing reduction structure is substantially transparent to radiation within an operative wavelength range specified for the image sensor, wherein the contaminant shadowing reduction structure comprises a patterned, cross-linked photoresist layer having a thickness of at least 300 μ

m.

5. An imaging sensor, comprising:

a substrate having a side supporting at least one imaging area and at least one wirebonding area;

light detectors constructed and arranged to receive light through the imaging area;

bond pads exposed in the wirebonding area for connecting to respective bond wires; and

a contaminant shadowing reduction structure on the imaging area having an exposed contaminant displacement surface over the imaging area and separated from the imaging area by a distance of at least 300 μ

m, wherein the contaminant shadowing reduction structure is substantially transparent to radiation within an operative wavelength range specified for the image sensor, wherein the contaminant shadowing reduction structure comprises a patterned, cured epoxy resin layer having a thickness of at least 300 μ

m.

9. A method fabricating an image sensor, comprising:

forming image sensor dice on a wafer, wherein each of the dice comprises light detectors constructed and arranged to receive light through a respective imaging area and bond pads in a wirebonding area;

forming on the dice a contaminant shadowing reduction structure having an exposed contaminant displacement surface over the imaging areas and separated from the imaging areas by a distance of at least 300 μ

m, wherein the forming of the contaminant shadowing reduction structure comprises depositing on the imaging areas organic material that has a thickness of at least 200 μ

m and is substantially transparent to radiation within an operative wavelength range specified for the image sensor and has dispersed therein at least one infrared light absorbing dye;

removing regions of the contaminant shadowing reduction structure over the wirebonding areas of the dice to expose the bond pads; and

separating the dice into respective image sensor chips.

10. The method of claim 9, wherein the organic material comprises a cured epoxy resin having a thickness of at least 200 μ

m.

11. The method of claim 9, wherein the organic material comprises a cross-linked photoresist layer having a thickness of at least 200 μ

m.

14. The method of claim 9, wherein the forming of the contaminant shadowing reduction structure comprises attaching to the dice a glass substrate having a thickness of at least 500 μ

m.

15. The method of claim 14, wherein the organic material comprises an uncured epoxy resin comprising at least one infrared light absorbing dye and the attaching comprises applying over the dice a layer of the uncured epoxy resin having a thickness of at least 200 μ

m, placing the glass substrate on the uncured epoxy resin layer, and curing the epoxy resin layer.

12. A method fabricating an imaging sensor, comprising:

forming image sensor dice on a wafer, wherein each of the dice comprises light detectors constructed and arranged to receive light through a respective imaging area and bond pads in a wirebonding area;

forming on the dice a contaminant shadowing reduction structure having an exposed contaminant displacement surface over the imaging areas and separated from the imaging areas by a distance of at least 300 μ

m, wherein the contaminant shadowing reduction structure is substantially transparent to radiation within an operative wavelength range specified for the image sensor, wherein the forming of the contaminant shadowing reduction structure comprises forming a patterned, cross-linked photoresist layer having a thickness of at least 300 μ

m;

removing regions of the contaminant shadowing reduction structure over the wirebonding areas of the dice to expose the bond pads; and

separating the dice into respective image sensor chips.

13. A method fabricating an image sensor, comprising:

forming image sensor dice on a wafer, wherein each of the dice comprises light detectors constructed and arranged to receive light through a respective imaging area and bond pads in a wirebonding area;

forming on the dice a contaminant shadowing reduction structure having an exposed contaminant displacement surface over the imaging areas and separated from the imaging areas by a distance of at least 300 μ

m, wherein the contaminant shadowing reduction structure is substantially transparent to radiation within an operative wavelength range specified for the image sensor, wherein the forming of the contaminant shadowing reduction structure comprises forming a patterned, cured epoxy resin layer having a thickness of at least 300 μ

m;

removing regions of the contaminant shadowing reduction structure over the wirebonding areas of the dice to expose the bond pads; and

separating the dice into respective image sensor chips.