Light-emitting device

• US 7,129,523 B2
• Filed: 10/12/2004
• Issued: 10/31/2006
• Est. Priority Date: 11/16/2001
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takayama, Toru, Murakami, Satoshi, Yamazaki, Shunpei, Sakakura, Masayuki
• Primary Examiner(s): Pham, Long
• Application Number:
  US10/961,144
• Publication Number:
  US 20050056840A1
• Time in Patent Office: 749 Days
• Field of Search: 257/49, 257/59, 257/79
• US Class Current: 257/59
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78633 with a light shield
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/8426 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 50/8445 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: H10K 50/846 comprising getter material or desiccants
• CPC Class Codes: H10K 50/865 comprising light absorbing layers, e.g. light-blocking layers
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/8722 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 59/8731 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: H10K 59/874 including getter material or desiccant
• CPC Class Codes: H10K 59/8792 comprising light absorbing layers, e.g. black layers

Abstract

The reliability of a light-emitting device constituted by a combination of a TFT and a light-emitting element is to be improved. A light-emitting element is formed between a first substrate and a second substrate. The light-emitting device is formed over a first insulating layer made of an organic compound and a second insulating layer made of an inorganic insulating material containing nitrogen formed on the surface of the first insulating layer. In an outer circumferential part of a display area formed by the light-emitting element, a shield pattern surrounding the display area is formed by metal wiring on the second insulating layer, and the first substrate and the second substrate are fixed to each other with an adhesive resin formed in contact with the shield pattern.

Claims

1. A light-emitting device comprising:

a first substrate;

a pixel part over the first substrate;

a conductive layer over the first substrate;

a first insulating layer including an organic compound over the first substrate and the conductive layer;

a second insulating layer including an inorganic material over the first insulating layer;

a light-emitting element over the second insulating layer in the pixel part;

a metal layer over the second insulating layer, which is formed overlapping the conductive layer;

a resin layer on the metal layer; and

a second substrate on the resin layer,

wherein the first substrate is fixed to the second substrate with the resin layer, and

wherein the metal layer surrounds the pixel part.

11. The light-emitting device according to claim 1, wherein the inorganic material is silicon nitride.

19. The light-emitting device according to claim 1,

wherein the inorganic material includes nitrogen, and

wherein the inorganic material has an oxygen concentration of 10 atom% or less and a hydrogen concentration of 10 atom% less.

31. The light-emitting device according to claim 1, further comprising a third insulating layer including a third inorganic material over the light-emitting element.

39. The light-emitting device according to claim 1, wherein the metal layer comprises a recess portion in contact with the resin layer.

2. A light-emitting device comprising:

a first substrate;

a pixel part over the first substrate;

a first insulating layer including a first organic compound over the first substrate;

a second insulating layer including a first inorganic material over the first insulating layer;

a third insulating layer including a second organic compound over the second insulating layer;

a fourth insulating layer including a second inorganic material over the third insulating layer;

a light-emitting element over the second insulating layer in the pixel part;

a metal layer over the second insulating layer;

a resin layer on the metal layer; and

a second substrate on the resin layer,

wherein the first substrate is fixed to the second substrate with the resin layer,

wherein at least a part of a top surface of the metal layer is in contact with the resin layer through an aperture of the fourth insulating layer, and

wherein the metal layer surrounds the pixel part.

12. The light-emitting device according to claim 2, wherein at least one of the first inorganic material and the second inorganic material is silicon nitride.

20. The light-emitting device according to claim 2,

wherein at least one of the first inorganic material and the second inorganic material includes nitrogen, and

wherein the at least one of the first inorganic material and the second inorganic material has an oxygen concentration of 10 atom% or less and a hydrogen concentration of 10 atom% less.

32. The light-emitting device according to claim 2, further comprising a fifth insulating layer including a third inorganic material over the light-emitting element.

40. The light-emitting device according to claim 2, wherein the metal layer comprises a recess portion in contact with the resin layer.

47. An appliance comprising the light-emitting device according to claim 2, wherein the appliance is selected from the group consisting of a personal computer, a television receiver, a video camera, a laptop, a personal digital assistant, a sonic reproducer, a digital camera and a mobile phone.

48. An appliance comprising the light-emitting device according to claim 2, wherein the appliance is selected from the group consisting of a personal computer, a television receiver, a video camera, a laptop, a personal digital assistant, a sonic reproducer, a digital camera and a mobile phone.

55. The light emitting device according to claim 2, wherein the first inorganic material and the second inorganic material is the same material.

3. A light-emitting device comprising:

a first substrate;

a pixel part over the first substrate;

a conductive layer over the first substrate;

a first insulating layer including an organic compound over the first substrate and the conductive layer;

a second insulating layer including an inorganic material over the first insulating layer;

a light-emitting element over the second insulating layer in the pixel part;

a plurality of metal layers over the second insulating layer, which are formed overlapping the conductive layer;

a resin layer on the plurality of metal layers; and

a second substrate on the resin layer,

wherein the first substrate is fixed to the second substrate with the resin layer, and

wherein the plurality of metal layers surround the pixel part.

13. The light-emitting device according to claim 3, wherein the inorganic material is silicon nitride.

21. The light-emitting device according to claim 3,

wherein the inorganic material includes nitrogen, and

wherein the inorganic material has an oxygen concentration of 10 atom% or less and a hydrogen concentration of 10 atom% or less.

33. The light-emitting device according to claim 3, further comprising a third insulating layer including a third inorganic material over the light-emitting element.

41. The light-emitting device according to claim 3, wherein at least one of the metal layers comprises a recess portion in contact with the resin layer.

49. An appliance comprising the light-emitting device according to claim 3, wherein the appliance is selected from the group consisting of a personal computer, a television receiver, a video camera, a laptop, a personal digital assistant, a sonic reproducer, a digital camera and a mobile phone.

4. A light-emitting device comprising:

a first substrate;

a pixel part over the first substrate;

a first insulating layer including a first organic compound over the first substrate;

a second insulating layer including a first inorganic material over the first insulating layer;

a third insulating layer including a second organic compound over the second insulating layer;

a fourth insulating layer including a second inorganic material over the third insulating layer;

a light-emitting element over the second insulating layer in the pixel part;

a plurality of metal layers over the second insulating layer;

a resin layer on the plurality of metal layers; and

a second substrate on the resin layer,

wherein the first substrate is fixed to the second substrate with the resin layer,

wherein at least a part of a top surface of each of the plurality of metal layers is in contact with the resin layer through an aperture of the fourth insulating layer, and

wherein the plurality of metal layers surround the pixel part.

14. The light-emitting device according to claim 4, wherein at least one of the first inorganic material and the second inorganic material is silicon nitride.

22. The light-emitting device according to claim 4,

wherein at least one of the first inorganic material and the second inorganic material includes nitrogen, and

wherein the at least one of the first inorganic material and the second inorganic material has an oxygen concentration of 10 atom% or less and a hydrogen concentration of 10 atom% or less.

34. The light-emitting device according to claim 4, further comprising a fifth insulating layer including a third inorganic material over the light-emitting element.

42. The light-emitting device according to claim 4, wherein at least one of the metal layers comprises a recess portion in contact with the resin layer.

50. An appliance comprising the light-emitting device according to claim 4, wherein the appliance is selected from the group consisting of a personal computer, a television receiver, a video camera, a laptop, a personal digital assistant, a sonic reproducer, a digital camera and a mobile phone.

56. The light emitting device according to claim 4, wherein the first inorganic material and the second inorganic material is the same material.

5. A light-emitting device comprising:

a first substrate;

a pixel part over the first substrate;

a thin film transistor over the first substrate in the pixel part, wherein the thin film transistor comprises;

a semiconductor layer;

a gate electrode;

a gate insulating film between the semiconductor layer and the gate electrode;

a source electrode connected to the semiconductor layer; and

a drain electrode connected to the semiconductor layer;

a first insulating layer including an organic compound over the thin film transistor;

a second insulating layer including an inorganic material over the first insulating layer;

a light-emitting element over the second insulating layer in the pixel part wherein the light-emitting element comprises;

a first electrode;

a light-emitting layer including an organic compound over the first electrode; and

a second electrode over the light-emitting layer;

a metal layer over the second insulating layer;

a resin layer on the metal layer; and

a second substrate on the resin layer,

wherein the first substrate is fixed to the second substrate with the resin layer,

wherein at least a part of one of the source electrode and the drain electrode is covered by the first electrode, and

wherein the metal layer surrounds the pixel part.

15. The light-emitting device according to claim 5, wherein the inorganic material is silicon nitride.

23. The light-emitting device according to claim 5,

wherein the inorganic material includes nitrogen, and

wherein the inorganic material has an oxygen concentration of 10 atom% or less and a hydrogen concentration of 10 atom% or less.

27. The light-emitting device according to claim 5, further comprising a third insulating layer including a third inorganic material under the thin film transistor.

35. The light-emitting device according to claim 5, further comprising a third insulating layer including a third inorganic material over the light-emitting element.

43. The light-emitting device according to claim 5, wherein the metal layer comprises a recess portion in contact with the resin layer.

51. An appliance comprising the light-emitting device according to claim 5, wherein the appliance is selected from the group consisting of a personal computer, a television receiver, a video camera, a laptop, a personal digital assistant, a sonic reproducer, a digital camera and a mobile phone.

6. A light-emitting device comprising:

a first substrate;

a pixel part over the first substrate;

a thin film transistor over the first substrate in the pixel part wherein the thin film transistor comprises;

a semiconductor layer;

a gate electrode;

a gate insulating film between the semiconductor layer and the gate electrode;

a source electrode connected to the semiconductor layer; and

a drain electrode connected to the semiconductor layer;

a first insulating layer including a first organic compound over the thin film transistor;

a second insulating layer including a first inorganic material over the first insulating layer;

a third insulating layer including a second organic compound over the second insulating layer;

a fourth insulating layer including a second inorganic material over the third insulating layer;

a light-emitting element over the second insulating layer part, wherein the light-emitting element comprises;

a first electrode;

a light-emitting layer including an organic compound over the first electrode; and

a second electrode over the light-emitting layer;

a metal layer over the second insulating layer;

a resin layer on the metal layer; and

a second substrate on the resin layer,

wherein the first substrate is fixed to the second substrate with the resin layer,

wherein at least a part of one of the source electrode and the drain electrode is covered by the first electrode, and

wherein the metal layer surrounds the pixel part.

7. A light-emitting device according to claim 6, wherein at least a part of a top surface of the metal layer is in contact with the resin layer through an aperture of the fourth insulating layer.

16. The light-emitting device according to claim 6, wherein at least one of the first inorganic material and the second inorganic material is silicon nitride.

24. The light-emitting device according to claim 6,

wherein at least one of the first inorganic material and the second inorganic material includes nitrogen, and

wherein the at least one of the first inorganic material and the second inorganic material has an oxygen concentration of 10 atom% or less and a hydrogen concentration of 10 atom% or less.

28. The light-emitting device according to claim 6, further comprising a fifth insulating layer including a third inorganic material under the thin film transistor.

36. The light-emitting device according to claim 6, further comprising a fifth insulating layer including a third inorganic material over the light-emitting element.

44. The light-emitting device according to claim 6, wherein the metal layer comprises a recess portion in contact with the resin layer.

52. An appliance comprising the light-emitting device according to claim 6, wherein the appliance is selected from the group consisting of a personal computer, a television receiver, a video camera, a laptop, a personal digital assistant, a sonic reproducer, a digital camera and a mobile phone.

57. The light emitting device according to claim 6, wherein the first inorganic material and the second inorganic material is the same material.

8. A light-emitting device comprising:

a first substrate;

a pixel part over the first substrate;

a thin film transistor over the first substrate in the pixel part, wherein the thin film transistor comprises;

a semiconductor layer;

a gate electrode;

a gate insulating film between the semiconductor layer and the gate electrode;

a source electrode connected to the semiconductor layer; and

a drain electrode connected to the semiconductor layer;

a first insulating layer including an organic compound over the thin film transistor;

a second insulating layer including an inorganic material over the first insulating layer;

a light-emitting element over the second insulating layer in the pixel part, wherein the light-emitting element comprises;

a first electrode;

a light-emitting layer including an organic compound over the first electrode; and

a second electrode over the light-emitting layer;

a plurality of metal layers over the second insulating layer;

a resin layer on the plurality of metal layers; and

a second substrate on the resin layer,

wherein the first substrate is fixed to the second substrate with the resin layer,

wherein at least a part of one of the source electrode and the drain electrode is covered by the first electrode, and

wherein the plurality of metal layers surround the pixel part.

17. The light-emitting device according to claim 8, wherein the inorganic material is silicon nitride.

25. The light-emitting device according to claim 8,

wherein the inorganic material includes nitrogen, and

wherein the inorganic material has an oxygen concentration of 10 atom% or less and a hydrogen concentration of 10 atom% or less.

29. The light-emitting device according to claim 8, further comprising a third insulating layer including a third inorganic material under the thin film transistor.

37. The light-emitting device according to claim 8, further comprising a third insulating layer including a third inorganic material over the light-emitting element.

45. The light-emitting device according to claim 8, wherein at least one of the metal layers comprises a recess portion in contact with the resin layer.

53. An appliance comprising the light-emitting device according to claim 8, wherein the appliance is selected from the group consisting of a personal computer, a television receiver, a video camera, a laptop, a personal digital assistant, a sonic reproducer, a digital camera and a mobile phone.

9. A light-emitting device comprising:

a first substrate;

a pixel part over the first substrate;

a thin film transistor over the first substrate in the pixel part, wherein the thin film transistor comprises;

a semiconductor layer;

a gate electrode;

a gate insulating film between the semiconductor layer and the gate electrode;

a source electrode connected to the semiconductor layer; and

a drain electrode connected to the semiconductor layer;

a first insulating layer including a first organic compound over the thin film;

transistor;

a second insulating layer including a first inorganic material over the first insulating layer;

a third insulating layer including a second organic compound over the second insulating layer;

a fourth insulating layer including a second inorganic material over the third insulating layer;

a light-emitting element over the second insulating layer in the pixel part, wherein the light-emitting element comprises;

a first electrode;

a light-emitting layer including an organic compound over the first electrode; and

a second electrode over the light-emitting layer;

a plurality of metal layers over the second insulating layer;

a resin layer on the plurality of metal layers; and

a second substrate on the resin layer,

wherein the first substrate is fixed to the second substrate with the resin layer,

wherein at least a part of one of the source electrode and the drain electrode is covered by the first electrode, and

wherein the plurality of metal layers surround the pixel part.

10. A light-emitting device according to claim 9, wherein at least one of the plurality of metal layers is in contact with the resin layer through at least one aperture of the fourth insulating layer.

18. The light-emitting device according to claim 9, wherein at least one of the first inorganic material and the second inorganic material is silicon nitride.

26. The light-emitting device according to claim 9,

wherein at least one of the first inorganic material and the second inorganic material includes nitrogen, and

wherein the at least one of the first inorganic material and the second inorganic material has an oxygen concentration of 10 atom% or less and a hydrogen concentration of 10 atom% or less.

30. The light-emitting device according to claim 9, further comprising a fifth insulating layer including a third inorganic material under the thin film transistor.

38. The light-emitting device according to claim 9, further comprising a fifth insulating layer including a third inorganic material over the light-emitting element.

46. The light-emitting device according to claim 9, wherein at least one of the metal layers comprises a recess portion in contact with the resin layer.

54. An appliance comprising the light-emitting device according to claim 9, wherein the appliance is selected from the group consisting of a personal computer, a television receiver, a video camera, a laptop, a personal digital assistant, a sonic reproducer, a digital camera and a mobile phone.

58. The light emitting device according to claim 9, wherein the first inorganic material and the second inorganic material is the same material.