Electromagnetic radiation emitting semiconductor chip and procedure for its production
First Claim
1. A semiconductor chip which emits electromagnetic radiation, comprising:
- an epitaxially produced semiconductor layer stack based on a nitride semiconductor material, which includes an n-conducting semiconductor layers, a p-conducting semiconductor layer and an electromagnetic radiation generating region which is arranged between said n-conducting and p-conducting semiconductor layers;
a base, on which the semiconductor layer stack is arranged; and
a mirror layer, which is arranged between the semiconductor layer stack and the base and reflects electromagnetic radiation emitted by the semiconductor layer stack in a direction of the base,wherein the mirror layer has a plurality of planar reflection sub-surfaces, which are positioned obliquely with respect to a main plane of the electromagnetic radiation-generating region and each form an angle of between 10° and
50°
with respect to the main plane, andwherein the p-conducting semiconductor layer faces the base, and the mirror layer is comprised of a reflection surface of the p-conducting semiconductor layer, which includes the plurality of planar sub-surfaces which are positioned obliquely with respect to the main plane of the electromagnetic radiation-generating region and each form the angle of between 10° and
50°
with respect to the main plane.
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Accused Products
Abstract
Semiconductor chip which emits electromagnetic radiation, and method for fabricating it. To improve the light yield of semiconductor chips which emit electromagnetic radiation, a textured reflection surface (131) is integrated on the p-side of a semiconductor chip. The semiconductor chip has an epitaxially produced semiconductor layer stack (1) based on GaN, which comprises an n-conducting semiconductor layer (11), a p-conducting semiconductor layer (13) and an electromagnetic radiation generating region (12) which is arranged between these two semiconductor layers (11, 13). The surface of the p-conducting semiconductor layer (13) which faces away from the radiation-generating region (12) is provided with three-dimensional pyramid-like structures (15). A mirror layer (40) is arranged over the whole of this textured surface. A textured reflection surface (131) is formed between the mirror layer (40) and the p-conducting semiconductor layer (13). The textured reflection surface (131) can increase the amount of light which is decoupled at the radiation-outcoupling surface (111) by virtue of the fact that a beam (3), after double reflection on the reflection surface (131), is more likely not to be totally reflected.
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Citations
18 Claims
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1. A semiconductor chip which emits electromagnetic radiation, comprising:
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an epitaxially produced semiconductor layer stack based on a nitride semiconductor material, which includes an n-conducting semiconductor layers, a p-conducting semiconductor layer and an electromagnetic radiation generating region which is arranged between said n-conducting and p-conducting semiconductor layers; a base, on which the semiconductor layer stack is arranged; and a mirror layer, which is arranged between the semiconductor layer stack and the base and reflects electromagnetic radiation emitted by the semiconductor layer stack in a direction of the base, wherein the mirror layer has a plurality of planar reflection sub-surfaces, which are positioned obliquely with respect to a main plane of the electromagnetic radiation-generating region and each form an angle of between 10° and
50°
with respect to the main plane, andwherein the p-conducting semiconductor layer faces the base, and the mirror layer is comprised of a reflection surface of the p-conducting semiconductor layer, which includes the plurality of planar sub-surfaces which are positioned obliquely with respect to the main plane of the electromagnetic radiation-generating region and each form the angle of between 10° and
50°
with respect to the main plane. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification