Field effect transistors including vertically oriented gate electrodes extending inside vertically protruding portions of a substrate

• US 7,129,541 B2
• Filed: 09/20/2004
• Issued: 10/31/2006
• Est. Priority Date: 09/19/2003
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Shin-Ae, Kim, Sung-Min, Cho, Hye-Jin, Park, Dong-Gun, Yun, Eun-Jung
• Primary Examiner(s): NGUYEN, CUONG QUANG
• Application Number:
  US10/945,246
• Publication Number:
  US 20050062109A1
• Time in Patent Office: 771 Days
• Field of Search: 257314-324, 257328-333
• US Class Current: 257/330
• CPC Class Codes: H01L 29/42336 with one gate at least partly formed in a trench
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/66787 with a gate at the side of the channel
• CPC Class Codes: H01L 29/66825 with a floating gate H01L29/6684 takes precedence
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621

Abstract

A field effect transistor on an active region of a semiconductor substrate includes a vertically protruding thin-body portion of the semiconductor substrate and a vertically oriented gate electrode at least partially inside a cavity defined by opposing sidewalls of the vertically protruding portion of the substrate. The transistor further includes an insulating layer surrounding an upper portion of the vertically oriented gate electrode and a laterally oriented gate electrode on the insulating layer and connected to a top portion of the vertically oriented gate electrode. Accordingly, a T-shaped gate electrode is defined having a lateral portion on a top surface of a semiconductor substrate and having a vertical portion at least partially inside a cavity defined by opposing sidewalls of a vertically protruding portion of the substrate.

Claims

1. A field effect transistor, comprising:

a vertically protruding thin-body portion of a semiconductor substrate having a first cavity defined by opposing sidewalls thereof;

an insulating layer on the vertically protruding thin-body portion of the semiconductor substrate, the insulating layer having a second cavity defined by opposing sidewalls thereof, wherein the second cavity has a width that is substantially equal to a width of the first cavity;

a vertically oriented gate electrode inside the first cavity and the second cavity, wherein the vertically oriented gate electrode is in direct contact with the opposing sidewalls of the insulating layer; and

a gate insulating layer between the gate electrode and the opposing sidewalls of the vertically protruding thin-body portion of the semiconductor substrate.

2. The transistor of claim 1, further comprising:

a laterally oriented gate electrode on the insulating layer and connected to a top portion of the vertically oriented gate electrode.

3. The transistor of claim 2, wherein the vertically oriented gate electrode comprises silicide, and wherein the laterally oriented gate electrode comprises one of polysilicon, metal, and metal silicide.

4. The transistor of claim 2, wherein the laterally oriented gate electrode has a width that is greater than a width of the vertically oriented gate electrode.

5. The transistor of claim 1, further comprising a layer inside the first cavity between a bottom portion of the first cavity and the semiconductor substrate, wherein the layer is configured to prevent formation of an inversion layer channel at a portion of the semiconductor substrate adjacent a bottom portion of the vertically oriented gate electrode.

6. The transistor of claim 5, wherein the layer is thicker than the gate insulating layer and comprises one of silicon nitride, silicon oxide, and undoped silicon.

7. The transistor claim 2, further comprising:

an insulating spacer on the opposing sidewalls of the insulating layer,

wherein the width of the second cavity is greater than the width of the first cavity, and wherein the vertically oriented gate electrode is in direct contact with the insulating spacer.

8. The transistor claim 7, wherein sides of the second cavity are self-aligned to sides of the insulating spacer.

9. The transistor claim 2, wherein the first cavity comprises a contact hole type cavity.

10. The transistor claim 9, wherein the vertically oriented gate electrode comprises silicide, and wherein the laterally oriented gate electrode comprises one of polysilicon, metal, and metal silicide.

11. The transistor claim 9, further comprising:

a layer inside the first cavity between a bottom portion of the first cavity and the semiconductor substrate, wherein the layer is configured to prevent formation of an inversion layer channel at a portion of the semiconductor substrate adjacent a bottom portion of the vertically oriented gate electrode.

12. The transistor claim 11, wherein the layer is thicker than the gate insulating layer and comprises one of silicon nitride, silicon oxide, and undoped silicon.

13. A field effect transistor in a non-volatile EPROM, comprising:

a first T-shaped gate electrode having a lateral portion on a top surface of a semiconductor substrate and having a vertical portion at least partially inside a first cavity defined by opposing sidewalls of a vertically protruding portion of the substrate; and

a second T-shaped gate electrode having a lateral portion on a top surface of the substrate and having a vertical portion at least partially inside a second cavity defined by opposing sidewalls of the vertically protruding portion of the substrate,

wherein the lateral portion of the second T-shaped gate electrode is substantially parallel to the lateral portion of the first T-shaped gate electrode, and wherein the vertical portion of the second T-shaped gate electrode is substantially parallel to the vertical portion of the first T-shaped gate electrode.

14. A field effect transistor, comprising:

a vertically protruding thin-body portion of a semiconductor substrate having a first cavity defined by opposing sidewalls thereof;

an insulating layer on the vertically protruding thin-body portion of the semiconductor substrate, the insulating layer having a second cavity defined by opposing sidewalls thereof, wherein the second cavity has a width that is substantially equal to a width of the first cavity;

a vertically oriented gate electrode inside the first cavity and the second cavity, wherein the vertically oriented gate electrode is in direct contact with the opposing sidewalls of the insulating layer;

a gate insulating layer between the gate electrode and the opposing sidewalls of the vertically protruding thin-body portion of the semiconductor substrate; and

a laterally oriented gate electrode on the insulating layer and connected to a top portion of the vertically oriented gate electrode,

wherein the first cavity comprises a contact hole type cavity.

15. A field effect transistor on an active region of a semiconductor substrate, comprising:

a vertically protruding thin-body portion of the semiconductor substrate;

a first vertically oriented gate electrode at least partially inside a first cavity defined by opposing sidewalls of the vertically protruding portion of the substrate; and

a second vertically oriented gate electrode at least partially inside a second cavity defined by opposing sidewalls of the vertically protruding portion of the substrate.

16. The transistor of claim 15, further comprising:

an insulating layer surrounding an upper portion of the first and second vertically oriented gate electrodes;

a first laterally oriented gate electrode on the insulating layer and connected to a top portion of the first vertically oriented gate electrode; and

a second laterally oriented gate electrode on the insulating layer and connected to a top portion of the second vertically oriented gate electrode.

17. The transistor of claim 16, wherein the vertically oriented gate electrodes comprise silicide, and wherein the laterally oriented gate electrodes comprise metal.

18. The transistor of claim 16, wherein the first laterally oriented gate electrode has a width that is greater than a width of the first vertically oriented gate electrode.