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Vertical compound semiconductor field effect transistor structure

  • US 7,129,544 B2
  • Filed: 10/06/2004
  • Issued: 10/31/2006
  • Est. Priority Date: 07/18/2003
  • Status: Active Grant
First Claim
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1. A semiconductor switching structure comprising:

  • a depletion mode compound semiconductor sense FET device having a first doped gate region;

    a depletion mode compound semiconductor main FET device having a second doped gate region;

    a first source contact region coupled to the sense FET;

    a second source contact region coupled to the main FET; and

    a gate control structure coupled to the first and second doped gate regions, and wherein the sense FET device and the main FET device are configured as junction FET devices.

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