Structure and method of making capped chips including vertical interconnects having stud bumps engaged to surfaces of said caps

• US 7,129,576 B2
• Filed: 09/24/2004
• Issued: 10/31/2006
• Est. Priority Date: 09/26/2003
• Status: Expired due to Fees

• Current Assignee: Tessera, Inc. (Adeia Inc.)
• Original Assignee: Tessera, Inc. (Adeia Inc.)
• Inventors: Humpston, Giles
• Primary Examiner(s): Baumeister, B. William
• Assistant Examiner(s): Farahani, Dana
• Application Number:
  US10/949,693
• Publication Number:
  US 20050067688A1
• Time in Patent Office: 767 Days
• Field of Search: 257/698, 257/701, 257/704, 257/702, 257735-738, 257/774, 257/784, 257/791, 257788-789, 257/E23.129, 257690-693, 257/775, 257/779, 438/125
• US Class Current: 257/704
• CPC Class Codes: B81B 2207/095 through the lid
• CPC Class Codes: B81C 1/00293 maintaining a controlled atmosphere with processes not provided for in B81C1/00285
• CPC Class Codes: B81C 1/00301 Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• CPC Class Codes: B81C 2203/0145 Hermetically sealing an opening in the lid
• CPC Class Codes: B81C 2203/019 characterised by the material or arrangement of seals between parts
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/06135 Covering only the peripheral area of the surface to be connected, i.e. peripheral arrangements
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 2224/11334 using preformed bumps
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/13139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13169 : Platinum [Pt] as principal constituent
• CPC Class Codes: H01L 2224/1401 : Structure
• CPC Class Codes: H01L 2224/16 : of an individual bump connector
• CPC Class Codes: H01L 2224/45099 : Material
• CPC Class Codes: H01L 2224/48091 : Arched
• CPC Class Codes: H01L 2224/48227 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48228 : the bond pad being disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/4824 : Connecting between the body and an opposite side of the item with respect to the body
• CPC Class Codes: H01L 2224/48247 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/484 : Connecting portions
• CPC Class Codes: H01L 2224/81801 : Soldering or alloying
• CPC Class Codes: H01L 2224/82101 : by additive methods, e.g. direct writing
• CPC Class Codes: H01L 2224/9202 : Forming additional connectors after the connecting process
• CPC Class Codes: H01L 23/04 : characterised by the shape of the container or parts, e.g. caps, walls
• CPC Class Codes: H01L 23/3114 : the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/24 : of an individual high density interconnect connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 27/14618 : Containers
• CPC Class Codes: H01L 27/14627 : Microlenses
• CPC Class Codes: H01L 27/14636 : Interconnect structures
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01018 : Argon [Ar]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01058 : Cerium [Ce]
• CPC Class Codes: H01L 2924/01061 : Promethium [Pm]
• CPC Class Codes: H01L 2924/01077 : Iridium [Ir]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/07811 : Extrinsic, i.e. with electrical conductive fillers
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15165 : Monolayer substrate
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/16151 : Cap comprising an aperture, e.g. for pressure control, encapsulation
• CPC Class Codes: H01L 2924/16195 : Flat cap [not enclosing an internal cavity]
• CPC Class Codes: H01L 2924/16235 : Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H03H 3/007 : for the manufacture of electromechanical resonators or networks
• CPC Class Codes: H03H 9/0547 : consisting of a vertical arrangement H03H9/0566 takes precedence
• CPC Class Codes: H03H 9/0585 : consisting of an adhesive layer
• CPC Class Codes: H03H 9/059 : consisting of mounting pads or bumps
• CPC Class Codes: H03H 9/1057 : for microelectro-mechanical devices
• CPC Class Codes: H03H 9/1064 : for surface acoustic wave [SAW] devices
• CPC Class Codes: H03H 9/1071 : the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the SAW device

Abstract

A capped chip is provided which includes a chip and a cap member, the chip having a front surface and a plurality of bond pads exposed at the front surface, the cap member having a bottom surface facing the front surface of the chip and having a top surface opposite the front surface. A plurality of through holes extend from the bottom surface of the cap member to the top surface. The capped chip assembly further includes a plurality of metallic interconnects extending from the bond pads at least partially through the through holes, the metallic interconnects including stud bumps joined to the bond pads, the stud bumps contacting and engaging at least one of (i) the top surface of the cap member surrounding the through holes and (ii) inner surfaces of the through holes.

Claims

1. A capped chip, comprising:

a chip having a front surface and a plurality of bond pads exposed at said front surface;

a cap member having a bottom surface facing said front surface of said chip and having a top surface opposite said front surface, said bottom surface spaced from said front surface to define a void between said chip and said cap member, said cap member further having a plurality of through holes extending from said bottom surface to said top surface; and

a plurality of metallic interconnects extending from said bond pads at least partially through said through holes, said metallic interconnects including stud bumps joined to said bond pads, said metallic interconnects contacting and engaging at least one of (i) said top surface of said cap member surrounding said through holes and (ii) inner surfaces of said through holes.

2. A capped chip as claimed in claim 1, wherein said through holes do not have solderable metallizations.

3. A capped chip as claimed in claim 1, wherein said metallic interconnects include a seal medium having a different composition from said stud bumps, said seal medium sealing said stud bumps to said cap member.

4. A capped chip as claimed in claim 3, wherein said seal medium includes a conductive organic material.

5. An assembly including a capped chip as claimed in claim 1, and further comprising an interconnection element, said interconnection element including pressure contacts pressed against said stud bumps to electrically interconnect said interconnection element to said capped chip.

6. A capped chip as claimed in claim 1, wherein said metallic interconnects are coplanar with said top surface.

7. A capped chip as claimed in claim 6, wherein sidewalls of said through holes are oriented at an angle of about 90 degrees to said top surface.

8. An assembly including a capped chip as claimed in claim 1, further comprising a circuit panel having a plurality of terminals, wherein said metallic interconnects are joined to said terminals of said circuit panel.

9. A capped chip as claimed in claim 1, wherein said stud bumps consist essentially of at least one metal selected from the group consisting of gold and copper.

10. A capped chip as claimed in claim 1, further comprising wettable metal layers overlying inner walls of said through holes, said metallic interconnects including a fusible metallic material which wets said wettable metal layers and said stud bumps.