Method for selective removal of high-k material
First Claim
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1. A method for selective removal of a high-k material from a substrate, the method comprising:
- providing a high-k material on a semiconductor substrate; and
contacting the high-k material with a solution comprising HF at a concentration of from about 0.05 M, ethanol at a concentration of about 80%, and HCl at a concentration of about 20%, whereby the high-k material is selectively removed from the substrate.
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Abstract
The present invention relates to a method for selectively removing a high-k material comprising providing a high-k material on a semiconductor substrate, and contacting the high-k material with a solution comprising HF, an organic compound, and an inorganic acid.
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Citations
48 Claims
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1. A method for selective removal of a high-k material from a substrate, the method comprising:
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providing a high-k material on a semiconductor substrate; and contacting the high-k material with a solution comprising HF at a concentration of from about 0.05 M, ethanol at a concentration of about 80%, and HCl at a concentration of about 20%, whereby the high-k material is selectively removed from the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for selective removal of a high-k material from a semiconductor substrate comprising:
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providing a high-k material on a semiconductor substrate; subjecting the high-k material to damaging, whereby a damaged high-k material is obtained; and
thereaftercontacting the damaged high-k material with a solution comprising HF at a concentration of from about 0.05 M, ethanol at a concentration of about 80%, and HCl at a concentration of about 20%, whereby the high-k material is selectively removed from the substrate. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method for selective removal of a high-k material from a substrate, the method comprising:
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providing a high-k material on a semiconductor substrate; and contacting the high-k material with a solution comprising HF at a concentration of from about 0.04 M to about 0.06 M, an alcohol at a concentration greater than or equal to about 50%, and HCl at a concentration of from about 10% to about 30%, whereby the high-k material is selectively removed from the substrate. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32)
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33. A method for selective removal of a high-k material from a semiconductor substrate comprising:
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providing a high-k material on a semiconductor substrate; subjecting the high-k material to damaging, whereby a damaged high-k material is obtained; and
thereaftercontacting the damaged high-k material with a solution comprising HF at a concentration of from about 0.04 M to about 0.06 M, an alcohol at a concentration greater than or equal to about 50%, and HCl at a concentration of from about 10% to about 30%, whereby the high-k material is selectively removed from the substrate. - View Dependent Claims (34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
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Specification