MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression

• US 7,132,618 B2
• Filed: 02/06/2003
• Issued: 11/07/2006
• Est. Priority Date: 03/17/2000
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Ye, Yan, Hoffman, Daniel J., Buchberger, Douglas A. Jr., Miller, Matthew L., Katz, Dan, Zhao, Xiaoye, Chiang, Kang-Lie, Hagen, Robert B.
• Primary Examiner(s): PASCHALL, MARK H
• Application Number:
  US10/359,989
• Publication Number:
  US 20030136766A1
• Time in Patent Office: 1,370 Days
• Field of Search: 219/121.4, 219/121.41, 219/121.52, 219/121.43, 219/121.36, 219/121.57, 118/723.I, 156/345, 204/298.37, 204/298.38, 438/710
• US Class Current: 219/121.43
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32183 Matching circuits
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/3266 Magnetic control means

Abstract

A plasma reactor for processing a semiconductor workpiece, includes reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.

Claims

1. A plasma reactor for processing a semiconductor workpiece, comprising:

a reactor chamber having a chamber wall;

a workpiece support within said chamber for holding the semiconductor workpiece;

an overhead electrode overlying said workpiece support;

a VHF power generator of RF power at a VHF frequency, said VHF power generator being coupled between said workpiece support and said overhead electrode; and

a fixed impedance match element comprising;

a larger area ground conductor coupled to a return terminal of said VHF power generator and having a cylindrical portion terminated on said chamber wall;

a generally elongate smaller area RF conductor adjacent and spaced from said larger area ground conductor and terminated on said overhead electrode;

an RF tap at a location on said generally elongate smaller area RF conductor, said location corresponding to at least a near match between an output impedance of said VHF power generator and a characteristic impedance of said fixed impedance match element, said RF tap comprising a coupling between an RF output terminal of said VHF power generator and said generally elongate smaller area RF conductor.

2. The reactor of claim 1 further comprising an MERIE magnetic field generator for producing an MERIE magnetic field, wherein said MERIE magnetic field rotates over time across a top surface of said workpiece.

3. The reactor of claim 2 wherein said MERIE field generator comprises a plurality of electromagnets situated about said chamber wall.

4. The reactor of claim 2 wherein said MERIE field generator comprises a plurality of permanent magnets situated about said chamber wall.

5. The reactor of claim 1 wherein said overhead electrode comprises a gas distribution showerhead.

6. The reactor of claim 2 wherein said MERIE magnetic field enhances uniformity of plasma ion distribution in said chamber.

7. The reactor of claim 1 wherein said fixed impedance match element comprises a coaxial tuning stub, said larger area grounded conductor comprises a coaxial outer conductor and said generally elongate smaller area RF conductor comprises a coaxial inner conductor inside said coaxial outer conductor.

8. The reactor of claim 1 wherein said fixed impedance match element comprises a strip line circuit wherein said larger area grounded conductor comprises a planar top and a coaxial side wall, said generally elongate smaller area RF conductor comprises a strip line conductor generally parallel to said planar top and spaced therefrom by a gap corresponding to a characteristic impedance of said fixed impedance match element.

9. The reactor of claim 5 further comprising a process gas source and at least an elongate gas conduit coupling said gas distribution showerhead to said gas source, said generally elongate smaller area RF conductor being hollow along its length and said elongate gas conduit being inside of and generally following a path of said generally elongate smaller area RF conductor.

10. The reactor of claim 9 wherein said gas distribution shower head comprises at least an internal thermal control passage and said reactor further comprises at least a thermal control medium source for fluid or gas and at least an elongate thermal control conduit connecting said thermal control medium source to said internal thermal control passage, said elongate thermal control conduit being inside of and generally following a path of said generally elongate smaller area RF conductor.

11. The reactor of claim 1 wherein said tap is displaced from said location by a fraction of the length of said generally elongate smaller area RF conductor, whereby to optimize an impedance match space of said fixed tuning element.

12. The reactor of claim 11 wherein the characteristic impedance of said fixed tuning element is different from the output impedance of said VHF power generator by an amount that optimizes a match space between the characteristic impedance of said fixed match element, the output impedance of said VHF power generator and a plasma load impedance of said chamber.

13. The reactor of claim 1 further comprising a process-compatible layer on a surface of said overhead electrode facing said workpiece support.

14. The reactor of claim 13 wherein said process-compatible layer comprises silicon-carbide.

15. The reactor of claim 13 further comprising:

plural gas injectors in said overhead electrode facing into said chamber.

16. The reactor of claim 15 further comprising:

an insulating layer between said generally elongate smaller area RF conductor and said overhead electrode.

17. The reactor of claim 16 wherein said insulating layer provides sufficient capacitance to at least reduce arcing within said plural gas injectors.

18. The reactor of claim 16 further comprising:

an RF bias power source of an HF frequency connected to said workpiece support.

19. The reactor of claim 18 wherein a capacitance of said insulating layer corresponds to a peak admittance through said overhead electrode and said fixed impedance match element for a harmonic of said HF frequency, whereby to suppress plasma sheath harmonics.

20. The reactor of claim 15 wherein said gas injectors comprise arcuate narrow slots.

21. The reactor of claim 20 wherein an individual one of said arcuate narrow slots comprises an annulus.

22. The reactor of claim 1, further comprising a magnetic field generator situated about said chamber and designed to generate a magnetic field inside said chamber.

23. The reactor of claim 22, wherein said magnetic field affects the ion distribution of plasma generated in said chamber.

24. The reactor of claim 22, wherein said magnetic field generator comprises at least one electromagnet.

25. The reactor of claim 22, wherein said magnetic field generator comprises at least one permanent magnet.

26. A plasma reactor for processing a semiconductor workpiece, comprising:

a reactor chamber having a chamber wall;

a workpiece support within said chamber for holding the semiconductor workpiece;

an overhead electrode overlying said workpiece support;

a first RF power generator for producing RF power at a first frequency and having an output terminal coupled to said overhead electrode;

a second RF power generator for producing RF power at a second frequency different from said first frequency and having an output terminal coupled to said workpiece support pedestal;

a magnetic field generator for producing a rotating magnetic field in said reactor chamber that rotates over time across a top surface of said workpiece.

27. The reactor of claim 26 further comprising a fixed impedance match element coupled between said first RF power generator and said overhead electrode.

28. The reactor of claim 26 wherein a return terminal of said first RF power generator is coupled to said workpiece support.

31. The reactor of claim 26 wherein said magnetic field generator comprises plural electromagnets situated about said chamber wall.

32. The reactor claim 26 wherein said magnetic field generator comprises plural permanent magnets situated about said chamber wall.

33. The reactor claim 27 wherein said fixed impedance match element comprises one of:

(a) a coaxial tuning stub, (b) a strip line circuit.

34. The reactor of claim 27 wherein said fixed impedance match element provides a low impedance path to ground for RF power at said second frequency from said wafer support.

35. The reactor of claim 34 wherein said fixed impedance match element has a resonant frequency at or near said first frequency of said first RF power generator.

29. The reactor of claim 29 wherein a return terminal of said second RF power generator is coupled to said overhead electrode.

30. The reactor of claim 29 wherein said first frequency is a VHF frequency, said second frequency is an HF frequency.