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Test structure for detecting defect size in a semiconductor device and test method using same

  • US 7,132,684 B2
  • Filed: 04/29/2004
  • Issued: 11/07/2006
  • Est. Priority Date: 06/27/2003
  • Status: Expired due to Fees
First Claim
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1. A test structure for a semiconductor device, the test structure comprising:

  • a first test pattern including a plurality of electrically separated metal patterns;

    a plurality of metal vias formed proximate first and second end portions of each one of the plurality of metal patterns forming the first test pattern; and

    a second test pattern electrically connected in parallel to the first test pattern by the plurality of metal vias,such that a test voltage applied to the first test pattern indicates a resistance that varies in accordance with the presence and nature of a metal failure;

    wherein the second test pattern comprises an element selected from a group consisting of tungsten, aluminum, copper, or an alloy of these materials.

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