High frequency semiconductor integrated circuit device, wireless electric unit and wireless communication system

• US 7,132,900 B2
• Filed: 06/21/2004
• Issued: 11/07/2006
• Est. Priority Date: 08/22/2003
• Status: Expired due to Fees

• Current Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Yahagi, Koichi, Hikasa, Kazuhiko, Takano, Ryoichi
• Primary Examiner(s): Chang, Joseph
• Application Number:
  US10/870,914
• Publication Number:
  US 20050040896A1
• Time in Patent Office: 869 Days
• Field of Search: 331/108.C, 331/117.D, 331/74, 331/143, 333/33, 333/246
• US Class Current: 331/108.00C
• CPC Class Codes: H01L 24/02 Bonding areas on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01004 Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/15787 Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H03C 5/00 Amplitude modulation and angle modulation produced simultaneously or at will by the same modulating signal H03C7/00 takes precedence

Abstract

If a transmission oscillator is incorporated into a communication semiconductor integrated circuit, such as high a frequency IC, constituting a wireless communication system, a problem arises. The accuracy of control of the output power of a power amplifier is degraded. This degradation in accuracy is caused by coupling noise between the output pins of the transmission oscillator and an input pin for detection signals (feedback signals) associated with the output level of the power amplifier or crosstalk. To prevent this, a transmission oscillator of differential output configuration is incorporated into a high frequency IC and an impedance equivalent to the impedance connected with a regular output terminal or a dummy external terminal for outputting transmit signals in opposite phase is provided.

Claims

1. A high frequency semiconductor circuit device which comprises:

a transmission oscillator which outputs differential signals;

a first external terminal for outputting either of differential signals generated at the transmission oscillator;

an amplitude detection circuit which compares the amplitude of a reference signal with the amplitude of a feedback signal and generates a signal corresponding to the amplitude difference;

a second external terminal for receiving externally supplied signals;

a signal synthesis circuit which combines a signal inputted to the second external terminal with a signal of a predetermined frequency; and

an equivalent impedance circuit having an impedance equivalent to the impedance between one output terminal of said transmission oscillator and said first external terminal,

wherein one output terminal of said transmission oscillator of differential output configuration and said first external terminal are connected with each other through a first bonding wire, and the other output terminal of said transmission oscillator and one terminal of said equivalent impedance circuit are connected with each other through a second bonding wire, so that one output of the differential signals is outputted externally of the high frequency semiconductor circuit device via said first external terminal and the other output of the differential signals is provided to the equivalent impedance circuit included in the high frequency semiconductor circuit device.

2. The high frequency semiconductor circuit device according to claim 1,

wherein a signal which is generated by combining a signal inputted to said second external terminal with said signal of a predetermined frequency through said signal synthesis circuit can be supplied as said feedback signal to said amplitude detection circuit.

3. The high frequency semiconductor circuit device according to claim 2,

wherein a third external terminal for outputting voltage corresponding to the output of said amplitude detection circuit is provided.

4. The high frequency semiconductor circuit device according to claim 1,

wherein the constituent elements, other than at least inductance elements, of said transmission oscillator, said amplitude detection circuit, and said signal synthesis circuit are formed over one and the same semiconductor chip.

5. The high frequency semiconductor circuit device according to claim 1,

wherein said signal synthesis circuit comprises a differential circuit including a pair of differential input terminals;

one differential input terminal of the signal synthesis circuit is connected with said second external terminal; and

the other differential input terminal of said signal synthesis circuit is connected with a fourth external terminal.

6. The high frequency semiconductor circuit device according to claim 1,

wherein said signal synthesis circuit is a mixer circuit which generates a signal of the frequency corresponding to the difference between the frequency of a signal inputted to said second external terminal and the frequency of said signal of a predetermined frequency.

7. The high frequency semiconductor circuit device according to claim 1, which further comprises:

an oscillator which generates said signal of a predetermined frequency;

a second mixer circuit which combines a signal generated at the oscillator with a signal generated at said transmission oscillator and generates a signal having a frequency component corresponding to the frequency difference between the signals; and

a phase detection circuit which compares the phase of the output signal of the second mixer circuit with the phase of said reference signal and controls said transmission oscillator according to the phase difference.

8. A high frequency semiconductor circuit device which comprises:

a transmission oscillator of differential output configuration;

a pair of external terminals for outputting differential signals generated at the transmission oscillator;

an amplitude comparison circuit which compares the amplitude of a reference signal with the amplitude of a feedback signal and generates a signal corresponding to the amplitude difference;

a second external terminal for receiving externally supplied signals; and

a signal synthesis circuit which combines a signal inputted to the second external terminal with a signal of a predetermined frequency,

wherein a pair of the differential output terminals of said transmission oscillator and a pair of said external terminals are connected with each other through bonding wires,

further comprising;

a transmission oscillator of differential output configuration;

a first external terminal for outputting either of differential signals generated at the transmission oscillator;

an amplitude detection circuit which compares the amplitude of a reference signal with the amplitude of a feedback signal and generates a signal corresponding to the amplitude difference;

a second external terminal for receiving externally supplied signals;

a signal synthesis circuit which combines a signal inputted to the second external terminal with a signal of a predetermined frequency; and

an equivalent impedance circuit having an impedance equivalent to the impedance between one output terminal of said transmission oscillator and said first external terminal,

wherein one output terminal of said transmission oscillator of differential output configuration and said first external terminal are connected with each other through a first bonding wire, and the other output terminal of said transmission oscillator and one terminal of said equivalent impedance circuit are connected with each other through a second bonding wire, and

wherein the constituent elements, other than at least inductance elements, of said transmission oscillator, said amplitude detection circuit, and said signal synthesis circuit are formed over one and the same semiconductor chip.

9. The high frequency semiconductor circuit device according to claim 8,

wherein said signal synthesis circuit comprises a differential circuit including a pair of differential input terminals;

one differential input terminal of the signal synthesis circuit is connected with said second external terminal; and

the other differential input terminal of said signal synthesis circuit is connected with a fourth external terminal.

10. The high frequency semiconductor circuit device according to claim 8,

wherein said signal synthesis circuit is a mixer circuit which generates a signal of the frequency corresponding to the difference between the frequency of a signal inputted to said second external terminal and the frequency of said signal of a predetermined frequency.

11. The high frequency semiconductor circuit device according to claim 8, which further comprises:

an oscillator which generates said signal of a predetermined frequency;

a second mixer circuit which combines a signal generated at the oscillator with a signal generated at said transmission oscillator and generates a signal having a frequency component corresponding to the frequency difference between the signals; and

a phase detection circuit which compares the phase of the output signal of the second mixer circuit with the phase of said reference signal and controls said transmission oscillator according to the phase difference.