Process of forming a capacitative audio transducer

• US 7,134,179 B2
• Filed: 12/13/2004
• Issued: 11/14/2006
• Est. Priority Date: 08/29/2002
• Status: Expired due to Term

• Current Assignee: Delphi Technologies Ip Limited (BorgWarner Incorporated)
• Original Assignee: Delphi Technologies, Inc. (Aptiv PLC)
• Inventors: Long, Stephen P, Queen, George M, Christenson, John C., Chilcott, Dan W., Baney, William J., Vas, Timothy A., Betzner, Timothy M., Freeman, John E.
• Primary Examiner(s): Tugbang, A. Dexter
• Assistant Examiner(s): NGUYEN, TAI V
• Application Number:
  US11/010,862
• Publication Number:
  US 20050101047A1
• Time in Patent Office: 701 Days
• Field of Search: 295/94, 29/254.1, 29/254.2, 438/33, 438/42, 438/44, 438/45, 438/46, 381/170, 381/171, 381/174, 381/175, 204/192.1
• US Class Current: 29/594
• CPC Class Codes: B81B 2201/0257 Microphones or microspeakers
• CPC Class Codes: B81B 2203/0127 Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
• CPC Class Codes: B81C 1/00666 Treatments for controlling internal stress or strain in MEMS structures
• CPC Class Codes: H04R 19/005 using semiconductor materials
• CPC Class Codes: H04R 31/00 Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor manufacture of microstructural arrangements of deformable or non-deformable structures in general B81C1/00182
• CPC Class Codes: H04R 31/006 Interconnection of transducer parts of diaphragm and outer suspension by moulding H04R31/003
• CPC Class Codes: Y10T 29/43 Electric condenser making
• CPC Class Codes: Y10T 29/435 Solid dielectric type
• CPC Class Codes: Y10T 29/49005 Acoustic transducer

Abstract

A process of forming a capacitive audio transducer, preferably having an all-silicon monolithic construction that includes capacitive plates defined by doped single-crystal silicon layers. The capacitive plates are defined by etching the single-crystal silicon layers, and the capacitive gap therebetween is accurately established by wafer bonding, yielding a transducer that can be produced by high-volume manufacturing practices.

Claims

1. A process of forming a capacitive audio transducer, the process comprising the steps of:

providing a first wafer having a substrate and a first single-crystal silicon layer epitaxially grown thereon and doped with boron and germanium so as to be p-type;

forming on the first single-crystal silicon layer a second single-crystal silicon layer that is more lightly doped than the first single-crystal silicon layer;

forming a recess in the second single-crystal silicon layer so as to expose a portion of the first single-crystal silicon layer, the portion of the first single-crystal silicon layer defining a first capacitor plate of the capacitive audio transducer;

providing a second wafer having a substrate and a third single-crystal silicon layer epitaxially grown thereon and doped with boron and germanium so as to be p-type;

forming an oxide layer on the second single-crystal silicon layer;

bonding the first and second wafers together so that the recess in the second single-crystal silicon layer defines a cavity between the first and third single-crystal silicon layers and the oxide layer is bonded to the third single-crystal silicon layer of the second wafer; and

removing at least portions of the substrates of the first and second wafers to expose a portion of the first single-crystal silicon layer defining the first capacitor plate and to expose a portion of the third single-crystal silicon layer that is spaced apart from the first single-crystal silicon layer by the cavity, the portion of the third single-crystal silicon layer defining a second capacitor plate that is capacitively coupled to the first capacitor plate of the capacitive audio transducer, one of the first and second capacitor plates being movable in response to impingement by sound vibrations;

wherein a capacitive output signal is produced in response to changes in the distance between the first and second capacitor plates that occur as a result of sound-induced vibration.

2. A process according to claim 1, wherein the third single-crystal silicon layer is formed on the second wafer to be thinner than the first single-crystal silicon layer on the first wafer, and the second capacitor plate is movable in response to impingement by sound vibrations.

3. A process according to claim 1, further comprising the step of forming stiction bumps within the recess following the step of forming the recess in the second single-crystal silicon layer.

4. A process according to claim 1, wherein the step of forming the recess in the second single-crystal silicon layer simultaneously produces accesses for electrical contact to the first single-crystal silicon layer through the second single-crystal silicon layer.

5. A process according to claim 1, further comprising the step of providing a vent to the cavity through the first single-crystal silicon layer, a first portion of the vent being formed by etching through the first single-crystal silicon layer after the step of forming the recess in the second single-crystal silicon layer and before the bonding step.