Chemical vapor deposition method using alcohol for forming metal oxide thin film

• US 7,135,207 B2
• Filed: 01/31/2003
• Issued: 11/14/2006
• Est. Priority Date: 04/02/2002
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Cho, Young-jin, Min, Yo-sep, Lee, Jung-hyun
• Primary Examiner(s): Meeks, Timothy
• Assistant Examiner(s): Sellman, Cachet I.
• Application Number:
  US10/355,221
• Publication Number:
  US 20030185981A1
• Time in Patent Office: 1,383 Days
• Field of Search: 427/255.35, 427/255.36
• US Class Current: 427/255.36
• CPC Class Codes: C23C 16/40 Oxides
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD

Abstract

Provided is a method for fabricating a metal oxide thin film in which a metal oxide generated by a chemical reaction between a first reactant and a second reactant is deposited on the surface of a substrate as a thin film. The method involves introducing a first reactant containing a metal-organic compound into a reaction chamber including a substrate; and introducing a second reactant containing alcohol. Direct oxidation of a substrate or a deposition surface is suppressed by a reactant gas during the deposition process, as it uses alcohol vapor including no radical oxygen as a reactant gas for the deposition of a thin film. Also, since the thin film is deposited by the thermal decomposition, which is caused by the chemical reaction between the alcohol vapor and a precursor, the deposition rate is fast. Particularly, the deposition rate is also fast when a metal-organic complex with β-diketone ligands is used as a precursor. Further, a thin film with low leakage current can be obtained as the metal oxide thin film fabrication method using a chemical vapor deposition or atomic layer deposition method grows a thin film with fine microstructure.

Claims

1. A method for fabricating a titanium oxide thin film, comprising:

introducing a first reactant containing a titanium metal-organic complex with at least one diketone ligand selected from the group consisting of Ti(mpd)(thd)₂ and Ti(thd)₂(OiPr)₂ into a reaction chamber including a substrate;

introducing a second reactant containing alcohol; and

wherein the titanium oxide in the anatase phase is generated by a chemical reaction between the first reactant and the second reactant and is deposited on the surface of the substrate as a thin film.

2. The method of claim 1, wherein the alcohol is of at least one selected from the group consisting of alcohol having 1 to 8 carbon atoms.

3. The method of claim 1, wherein the alcohol is evaporated before it is introduced into the reaction chamber.

4. The method of claim 1, wherein the titanium metal-organic complex with a β

-diketone ligand is Ti(mpd)(thd)₂.

5. The method of claim 1, wherein the titanium metal-organic complex with the β

-diketone ligand is Ti(thd)₂(OiPr)₂.

6. The method of claim 1, wherein the first reactant and the second reactant are introduced into the reaction chamber simultaneously.

7. The method of claim 1, wherein the first reactant and the second reactant are introduced into the reaction chamber at different time periods separately.

8. The method of claim 7, further including a time period for purging the reaction chamber with an inert gas between the time period for supplying the first reactant into the reaction chamber and the time period for supplying the second reactant into the reaction chamber.

9. The method of claim 8, comprising the steps of:

introducing the first reactant into the reaction chamber and chemically adsorbing the first reactant on the surface of the substrate;

purging the reaction chamber with an inert gas and removing the physically adsorbed or remaining first reactant;

substituting the chemically adsorbed first reactant into a titanium metal-oxygen atomic layer by introducing the second reactant into the reaction chamber and reacting the second reactant with the chemically adsorbed first reactant; and

purging the reaction chamber with an inert gas and removing gas produced after the reaction and the physically adsorbed or remaining second reactant.