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Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials

  • US 7,135,445 B2
  • Filed: 10/22/2003
  • Issued: 11/14/2006
  • Est. Priority Date: 12/04/2001
  • Status: Expired due to Term
First Claim
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1. A cleaning or photoresist stripping composition comprising:

  • (a) from about 5% to about 50% by weight of a polar aprotic nitrogen-containing solvent having a dipole moment of more than about 3.5;

    (b) from about 0.2% to about 20% by weight of a compound selected from the group consisting of a hydroxide and/or salt of bis-(2-hydroxy-ethyl)-dimethyl ammonium, a hydroxide and/or salt of tris-(2-hydroxy-ethyl)-methyl ammonium, and a mixture thereof; and

    (c) from about 50% to about 94% by weight of a sulfur-containing solvent selected from the group consisting of a sulfoxide, a sulfone, and a mixture thereof, wherein the composition is substantially free of hydroxylamine.

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