Integrated circuit inductors
First Claim
1. An integrated circuit inductor formed in an interconnect dielectric stack on an integrated circuit, comprising:
- at least two metal-layer conductive lines that run parallel to each other in respective metal-layer dielectric layers in the interconnect dielectric stack; and
at least one via-trench conductive line in a via-trench dielectric layer in the interconnect stack, wherein the via-trench conductive line lies between the two metal-layer conductive lines, runs parallel to the two metal-layer conductive lines, and electrically connects the two metal-layer conductive lines.
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Accused Products
Abstract
Integrated circuit inductors may be formed using a spiral layout on the surface of an interconnect dielectric stack. Conductive lines from two or more metal layers in the interconnect stack may be electrically connected using one or more via trenches. The via trench interconnection arrangement reduces the resistance of the inductor and increases the inductor'"'"'s Q-factor. The Q-factor of the inductor may also be increased by placing a region of n-type and p-type wells or a metal plate region beneath the inductor to reduce power losses during operation. Shallow trench isolation may be used to reduce eddy currents and increase Q. The effects of copper dishing and trench blow-out may be used during inductor fabrication. A dual damascene fabrication process may be used.
50 Citations
26 Claims
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1. An integrated circuit inductor formed in an interconnect dielectric stack on an integrated circuit, comprising:
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at least two metal-layer conductive lines that run parallel to each other in respective metal-layer dielectric layers in the interconnect dielectric stack; and at least one via-trench conductive line in a via-trench dielectric layer in the interconnect stack, wherein the via-trench conductive line lies between the two metal-layer conductive lines, runs parallel to the two metal-layer conductive lines, and electrically connects the two metal-layer conductive lines. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. An integrated circuit inductor formed in an interconnect dielectric stack on an integrated circuit, comprising:
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at least three spiral metal-layer conductive lines that run parallel to each other in respective metal-layer dielectric layers in the interconnect dielectric stack; and at least two via-trench conductive lines each of which lies in a via-trench dielectric layer in the interconnect stack, wherein each via-trench conductive line lies between a respective two of the metal-layer conductive lines, runs parallel to those two metal-layer conductive lines, and electrically connects those two metal-layer conductive lines. - View Dependent Claims (18)
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19. An integrated circuit inductor formed in an interconnect dielectric stack that lies on the surface of a semiconductor substrate in an integrated circuit, comprising:
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at least two metal-layer conductive lines that run parallel to each other in respective metal-layer dielectric layers in the interconnect dielectric stack; at least one conductor in a via-trench dielectric layer in the interconnect stack that electrically connects the two metal-layer conductive lines; and a region of shallow trench isolation that is formed on the surface of the semiconductor substrate under the two metal-layer conductive lines, wherein the conductor comprises a via-trench conductive line that runs parallel to the metal-layer conductive lines. - View Dependent Claims (20, 21)
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22. A method of forming an integrated circuit inductor for an integrated circuit with a dielectric interconnect stack on a semiconductor substrate, comprising:
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forming at least two vertically-aligned metal-layer conductive lines in respective metal-layer dielectric layers in the dielectric interconnect stack using a damascene process; and forming at least one via-trench conductive line in a via-layer dielectric layer in the dielectric interconnect stack using the damascene process, wherein the via-trench conductive line runs parallel to the two metal-layer conductive lines and electrically interconnects the two metal-layer conductive lines. - View Dependent Claims (23, 24, 25, 26)
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Specification