Method, system and circuit for programming a non-volatile memory array
First Claim
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1. A multi-phase method of programming an array of non-volatile memory (“
- NVM”
) cells, said method comprising;
Applying to a first set of NVM cells first phase programming pulses; and
upon one or more NVM cells of the first set of cells reaching or exceeding a first intermediate threshold voltage level, applying to a terminal of two or more cells in the first set of cells second phase programming pulses adapted to induce relatively greater threshold voltage changes in cells having less stored charge than in cells having relatively more stored charge.
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Abstract
The present invention is a multi-phase method, circuit and system for programming non-volatile memory (“NVM”) cells in an NVM array. The present invention may include a controller to determine when, during a first programming phase, one or more NVM cells of a first set of cells reaches or exceeds to first intermediate voltage, and to cause a charge pump circuit to apply to a terminal of the one or more cells in the first set second phase programming pulses to induce relatively greater threshold voltage changes in cells having less stored charge than in cells having relatively more stored charge.
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Citations
17 Claims
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1. A multi-phase method of programming an array of non-volatile memory (“
- NVM”
) cells, said method comprising;Applying to a first set of NVM cells first phase programming pulses; and upon one or more NVM cells of the first set of cells reaching or exceeding a first intermediate threshold voltage level, applying to a terminal of two or more cells in the first set of cells second phase programming pulses adapted to induce relatively greater threshold voltage changes in cells having less stored charge than in cells having relatively more stored charge. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
- NVM”
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15. A System for programming an array of non-volatile memory (“
- NVM”
) cells, said system comprising;a controller adapted to cause a charge circuit to produce first phase programming pulses and to determine when one or more NVM cell of a first set of cells receiving the first phase programming pulses reaches or exceeds a first intermediate voltage, and to then cause said charge pump circuit to apply to a terminal the one or more cells in the first set second phase programming pulses adapted to induce relatively greater threshold voltage changes in cells having less stored charge than in cells having relatively more stored charge. - View Dependent Claims (16, 17)
- NVM”
Specification