Method and apparatus for an improved deposition shield in a plasma processing system

• US 7,137,353 B2
• Filed: 09/30/2002
• Issued: 11/21/2006
• Est. Priority Date: 09/30/2002
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Nakayama, Hiroyuki, Mitsuhashi, Kouji, Takase, Taira, Saigusa, Hidehito
• Primary Examiner(s): Hassanzadeh, Parviz
• Assistant Examiner(s): Crowell, Michelle
• Application Number:
  US10/259,353
• Publication Number:
  US 20040060657A1
• Time in Patent Office: 1,513 Days
• Field of Search: 118/723.R, 156/916
• US Class Current: 118/723.00R
• CPC Class Codes: H01J 37/32477 characterised by the means for protecting vessels or internal parts, e.g. coatings
• CPC Class Codes: Y10S 156/916 Differential etching apparatus including chamber cleaning means or shield for preventing deposits

Abstract

The present invention presents an improved deposition shield for surrounding a process space in a plasma processing system, wherein the design and fabrication of the deposition shield advantageously provides for a clean processing plasma in the process space with substantially minimal erosion of the deposition shield.

Claims

1. A deposition shield for surrounding a process space in a plasma processing system, comprising:

a cylinder comprising an inner surface, an outer surface, an upper end surface, and a lower end surface, wherein said lower end surface further comprises;

a first surface extending radially inward from said outer surface, and

a protrusion adjacent to said inner surface and protruding from said first surface, said protrusion having an end lip surface thereon; and

a protective barrier provided on a plurality of exposed surfaces of said deposition shield, wherein said exposed surfaces having said protective barrier thereon comprise said inner surface, said upper end surface, and said end lip surface of said lower end surface.

2. The deposition shield as recited in claim 1, wherein said deposition shield further comprises a plurality of fastening receptors coupled to said upper end surface and said first surface of said lower end surface of said deposition shield and configured to receive fastening devices in order to attach said deposition shield to said plasma processing system.

3. The deposition shield as recited in claim 2, wherein each of said plurality of fastening receptors comprises an entrant region, an entrant cavity, an exit through-hole, and an interior fastening surface.

4. The deposition shield as recited in claim 3, wherein said interior fastening surface of each of said plurality of fastening receptors comprises a first entrant surface, a first lip surface, a second entrant surface, a second lip surface, and an exit surface.

5. The deposition shield as recited in claim 1, wherein said deposition shield further comprises an opening in order to access said process space through said deposition shield.

6. The deposition shield as recited in claim 5, wherein said opening comprises:

a first opening surface extending radially inward from said outer surface,

a second opening surface extending radially outward from said inner surface, and

a mating surface coupling said first opening surface to said second opening surface.

7. The deposition shield as recited in claim 6, wherein said mating surface comprises at least one threaded hole and a fastening surface coupled thereto.

8. The deposition shield as recited in claim 1, wherein said deposition shield is at least partially formed of metal.

9. The deposition shield as recited in claim 8, wherein said metal comprises aluminum.

10. The deposition shield as recited in claim 1, wherein said protective barrier comprises a compound containing at least one of a group III element and a Lanthanon element.

11. The deposition shield as recited in claim 10, wherein said group III element comprises at least one of Yttrium, Scandium, and Lanthanum.

12. The deposition shield as recited in claim 10, wherein said Lanthanon element comprises at least one of Cerium, Dysprosium, and Europium.

13. The deposition shield as recited in claim 1, wherein said protective barrier comprises at least one of Y₂O₃, Sc₂O₃, Sc₂F₃, YF₃, La₂O₃, CeO₂, Eu₂O₃, and DyO₃.

14. The deposition shield as recited in claim 1, wherein said protective barrier comprises a minimum thickness and said minimum thickness is constant across at least one of said exposed surfaces having the protective barrier thereon.

15. The deposition shield as recited in claim 1, wherein said protective barrier comprises a variable thickness and said variable thickness ranging from 0.5 to 500 microns.

16. The deposition shield as recited in claim 6, wherein said plurality of exposed surfaces having the protective barrier thereon further comprise said first opening surface of said opening, and said mating surface of said opening in said deposition shield.

17. The deposition shield as recited in claim 7, wherein said plurality of exposed surfaces having the protective barrier thereon further comprise said first opening surface of said opening, and said mating surface excluding said fastening surface of said opening in said deposition shield.

18. The deposition shield as recited in claim 17, wherein said plurality of exposed surfaces having the protective barrier thereon further comprise said second opening surface of said opening.

19. The deposition shield as recited in claim 7, wherein said plurality of exposed surfaces having the protective barrier thereon further comprise said first opening surface of said opening, and said mating surface including said fastening surface of said opening in said deposition shield.

20. The deposition shield as recited in claim 19, wherein said plurality of exposed surfaces having the protective barrier thereon further comprise said second opening surface of said opening.

21. The deposition shield as recited in claim 19, wherein said outer surface comprises an anodization layer.

22. The deposition shield as recited in claim 19, wherein said second opening surface comprises an anodization layer.

23. The deposition shield as recited in claim 19, wherein said mating surface comprises a metallic surface.

24. The deposition shield as recited in claim 1, wherein said cylinder comprises a diameter greater than 200 mm.

25. The deposition shield as recited in claim 1, further comprising a recess radially positioned between said first surface and said protrusion, said recess being recessed from said first surface.

26. The deposition shield as recited in claim 25, wherein said protrusion further comprising a tapered transition surface extending from said end lip surface to a sidewall of said recess.

27. The deposition shield as recited in claim 26 wherein said protective barrier is provided on at least a portion of said transition surface.

28. The deposition shield as recited in claim 25, wherein said protective barrier is provided on said end lip surface and said protective barrier is not provided on said recess.

29. The deposition shield as recited in claim 1, wherein said upper end surface comprises:

a first surface extending radially outward from said inner surface; and

a protrusion adjacent to said outer surface and protruding from said first surface.

30. The deposition shield as recited in claim 29, further comprising a recess radially positioned between said first surface and said protrusion, said recess having a recess surface recessed from said first surface.

31. The deposition shield as recited in claim 29 wherein said protective barrier is provided on at least a portion of said upper end surface.

32. The deposition shield as recited in claim 29, wherein said protective barrier is provided on only a portion of said upper end surface.

33. The deposition shield of claim 30, wherein:

said protective barrier is provided on a portion of said upper end surface extending from said inner surface to said recess surface, and

said protective barrier is not provided on said recess surface.

34. The deposition shield as recited in claim 7, further comprising a recess recessed from said mating surface, said recess being positioned between said threaded hole and said second opening surface.

35. The deposition shield as recited in claim 34, wherein:

said protective barrier comprises a first protective barrier area provided on a portion of said mating surface extending from said first opening surface, and a second protective barrier area provided on a portion of said recess including a sidewall of said recess adjacent to said threaded hole, and

said fastening surfaces include a first fastening surface extending from said first protective barrier area to said threaded hole, and a second fastening surface extending from said second protective barrier area to said threaded hole.

36. The deposition shield as recited in claim 35, wherein:

said outer surface and said second opening surface are anodized, and

said threaded hole and said first and second fastening surfaces are not anodized and do not have said protective barrier provided thereon.

37. The deposition shield as recited in claim 1, wherein said protective barrier consists essentially of Yttria.

38. A deposition shield for surrounding a process space in a plasma processing system, comprising:

a cylinder comprising an inner surface, an outer surface, an upper end surface, and a lower end surface, wherein;

said upper end surface comprises a first surface extending radially outward from said inner surface to an upper end recessed surface that is recessed from said first surface, and

said lower end surface comprises a second surface extending radially outward from said inner surface to a lower end recessed surface that is recessed from said second surface; and

a protective barrier provided on said inner surface, said first surface of the upper end surface, and said second surface of the lower end surface.

39. The deposition shield as recited in claim 38, wherein said protective barrier is provided on said first surface and is not provided on said upper end recessed surface.

40. The deposition shield as recited in claim 38, wherein said protective barrier is provided on said second surface and is not provided on said lower end recessed surface.

41. The deposition shield as recited in claim 40, wherein said protective barrier is provided on only a portion of said second surface.

42. The deposition shield as recited in claim 38, wherein said protective barrier consists essentially of Yttria.

43. A deposition shield for surrounding a process space in a plasma processing system, comprising:

a cylinder comprising an inner surface and an outer surface;

an upper end surface coupling said inner surface to said outer surface;

a lower end surface coupling said inner surface to said outer surface;

an opening having an opening surface coupling said inner surface to said outer surface; and

a protective barrier provided on said inner surface, said upper end surface, said lower end surface and said opening surface.

44. The deposition shield as recited in claim 43, wherein said opening surface comprises:

a first opening surface extending radially outward from said inner surface;

a second opening surface extending radially inward from said outer surface; and

a recess positioned between said first and second opening surfaces.

45. The deposition shield as recited in claim 44 wherein said protective barrier is provided on said first opening surface and provided on said second opening surface, and is not provided on said recess.

46. The deposition shield as recited in claim 43, wherein said lower end surface comprises:

a first surface extending radially inward from said outer surface;

a second surface extending radially outward from said inner surface; and

a recess radially positioned between said first surface and said second surface, said recess being recessed from said first surface and recessed from said second surface.

47. The deposition shield as recited in claim 46, wherein said protective barrier is provided on said second surface and is not provided on said recess.

48. The deposition shield as recited in claim 43, wherein:

said protective barrier is provided on only a portion of said upper end surface,

said protective barrier is provided on only a portion of said lower end surface, and

said protective baffler is provided on only a portion of said opening surface.

49. The deposition shield as recited in claim 43, wherein said protective baffler consists essentially of Yttria.