Thin film transistor array panel including symmetrically aligned thin film transistors and manufacturing method thereof
First Claim
1. A thin film transistor array panel comprising:
- first and second gate members connected to each other;
a gate insulating layer formed on the first and the second gate members;
first and second semiconductor members formed on the gate insulating layer, respectively;
first and second source members connected to each other and located near the first and the second semiconductor members, respectively;
first and second drain members located near the first and the second semiconductor members, respectively, and located opposite the first and the second source members, respectively; and
a pixel electrode connected to the first and the second drain members, wherein the first gate member, the first semiconductor member, the first source member, and the first drain members form a first thin film transistor, and the second gate member, the second semiconductor member, the second source member, and the second drain members form a second thin film transistor.
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Accused Products
Abstract
A TFT array panel includes: first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer opposite the first and the second gate members, respectively; first and second source members connected to each other and located near the first and the second semiconductor members, respectively; first and second drain members located near the first and the second semiconductor members, respectively, and located opposite the first and the second source members with respect to the first and the second gate members, respectively; and a pixel electrode connected to the first and the second drain members. The first gate, semiconductor, source, and drain members form a first TFT, and the second gate, semiconductor, source, and drain members form a second TFT.
18 Citations
18 Claims
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1. A thin film transistor array panel comprising:
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first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer, respectively; first and second source members connected to each other and located near the first and the second semiconductor members, respectively; first and second drain members located near the first and the second semiconductor members, respectively, and located opposite the first and the second source members, respectively; and a pixel electrode connected to the first and the second drain members, wherein the first gate member, the first semiconductor member, the first source member, and the first drain members form a first thin film transistor, and the second gate member, the second semiconductor member, the second source member, and the second drain members form a second thin film transistor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A thin film transistor array panel comprising:
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first and second gate members connected to each other; a gate insulating layer formed on the first and the second gate members; first and second semiconductor members formed on the gate insulating layer; first and second source members connected to each other and located over the first and the second semiconductor members, respectively; first and second drain members located over the first and the second semiconductor members, respectively, and located opposite the first and the second source members, respectively; and a pixel electrode connected to the first and the second drain members, wherein the first gate member, the first semiconductor member, the first source member, and the first drain members form a first thin film transistor, and the second gate member, the second semiconductor member, the second source member, and the second drain members form a second thin film transistor. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification