Barrier layers for microelectromechanical systems
First Claim
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1. A method comprising:
- depositing a first sacrificial layer;
depositing a first barrier layer after the first sacrificial layer;
forming a structural layer of a microelectromechanical device after the first barrier layer;
releasing the microelectromechanical device by removing the first sacrificial layer; and
wherein the first barrier layer prevents diffusion and reaction between the first sacrificial layer and the structural layer, and the first barrier layer is not removed after releasing the microelectromechanical device.
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Abstract
A method for processing microelectromechanical devices is disclosed herein. The method prevents the diffusion and interaction between sacrificial layers and structure layers of the microelectromechanical devices by providing selected barrier layers between consecutive sacrificial and structure layers.
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Citations
80 Claims
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1. A method comprising:
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depositing a first sacrificial layer; depositing a first barrier layer after the first sacrificial layer; forming a structural layer of a microelectromechanical device after the first barrier layer; releasing the microelectromechanical device by removing the first sacrificial layer; and wherein the first barrier layer prevents diffusion and reaction between the first sacrificial layer and the structural layer, and the first barrier layer is not removed after releasing the microelectromechanical device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62)
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63. A method comprising:
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providing a substrate, on which a first sacrificial layer with a target thickness can be deposited; depositing the first sacrificial layer at a thickness less than the target thickness; measuring a thickness of the deposited first sacrificial layer; and depositing a second sacrificial layer with a thickness substantially equal to the difference between the target thickness and the measured thickness of the deposited first sacrificial layer. - View Dependent Claims (64, 65, 66, 67, 68, 69, 70, 71, 72, 73, 74, 75, 76, 77, 78, 79, 80)
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Specification