Single crystal silicon sensor with additional layer and method of producing the same
First Claim
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1. A SOI-based MEMS device comprising:
- a base layer;
a device layer;
an insulator layer between the base layer and the device layer; and
a deposited layer having a portion that is spaced from the device layer;
the device layer being between the insulator layer and the deposited layer,the device layer having structure, the deposited layer forming a cap to seal the structure,wherein the deposited layer includes germanium.
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Abstract
A SOI-based MEMS device has a base layer, a device layer, and an insulator layer between the base layer and the device layer. The device also has a deposited layer having a portion that is spaced from the device layer. The device layer is between the insulator layer and the deposited layer.
65 Citations
17 Claims
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1. A SOI-based MEMS device comprising:
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a base layer; a device layer; an insulator layer between the base layer and the device layer; and a deposited layer having a portion that is spaced from the device layer; the device layer being between the insulator layer and the deposited layer, the device layer having structure, the deposited layer forming a cap to seal the structure, wherein the deposited layer includes germanium. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A MEMS inertial sensor comprising:
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a single crystal silicon layer having a top surface, the single crystal silicon layer also having sensing structure and a second component; and a deposited additional layer adjacent to the top surface of the single crystal silicon layer, the deposited additional layer having a portion that is spaced from the top surface, the deposited additional layer being conductive to serve as an interconnect for the sensing structure on the single crystal silicon layer, the deposited additional layer electrically connecting the sensing structure with the second component wherein the sensing structure includes a movable member spaced from the deposited additional layer by an air space. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A SOI-based MEMS device comprising:
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a base layer; a device layer; an insulator layer between the base layer and the device layer; and a deposited layer having a portion that is spaced from the device layer; the device layer being between the insulator layer and the deposited layer, the device layer having structure, the deposited layer forming a cap to seal the structure, wherein an air space separates the device layer from the deposited layer, further wherein the device layer has a top surface with given material formed thereon, the air space separating the given material from the deposited layer. - View Dependent Claims (14, 15, 16, 17)
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Specification