Electronic component for amplifying high frequency power and radio communication system
First Claim
1. An electronic component for amplifying high-frequency power, comprising:
- a first power amplification transistor for amplifying a modulated high-frequency signal in a first frequency band;
a second power amplification transistor for amplifying a modulated high frequency signal in a second frequency band;
a first transistor for output detection for receiving an input signal of said first power amplification transistor and a first current mirror circuit for passing current proportional to current of the transistor;
a second transistor for output detection for receiving an input signal of said second power amplification transistor and a second current mirror circuit for passing current proportional to the current of the transistor;
a sense resistor connected commonly on a transfer side of said first current mirror circuit and a transfer side of said second current mirror circuit and converting current to voltage; and
a bias control circuit for comparing a signal detected by said sense resistor with an output request level instruction signal and generating a bias current for said first and second power amplification transistors.
1 Assignment
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Accused Products
Abstract
A high-frequency power module as a component of a radio communication system capable of performing communications in two frequency bands such as GSM and DCS and has a first transistor for output detection for receiving a signal which is the same as an input signal of a first power amplification transistor for amplifying a high frequency signal on the GSM side and a first current mirror circuit for passing current proportional to current of the transistor. A second transistor for output detection for receiving an input signal of a second power amplification transistor for amplifying a high frequency signal on the DCS side is also provided as is a second current mirror circuit for passing current proportional to current of the transistor. Conversion of current transferred from the first and second current mirror circuits to voltage is shared by the GSM and DCS.
31 Citations
17 Claims
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1. An electronic component for amplifying high-frequency power, comprising:
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a first power amplification transistor for amplifying a modulated high-frequency signal in a first frequency band; a second power amplification transistor for amplifying a modulated high frequency signal in a second frequency band; a first transistor for output detection for receiving an input signal of said first power amplification transistor and a first current mirror circuit for passing current proportional to current of the transistor; a second transistor for output detection for receiving an input signal of said second power amplification transistor and a second current mirror circuit for passing current proportional to the current of the transistor; a sense resistor connected commonly on a transfer side of said first current mirror circuit and a transfer side of said second current mirror circuit and converting current to voltage; and a bias control circuit for comparing a signal detected by said sense resistor with an output request level instruction signal and generating a bias current for said first and second power amplification transistors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. An electronic component for amplifying high-frequency power, comprising:
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a first power amplification transistor for amplifying a modulated high frequency signal in a first frequency band; a second power amplification transistor for amplifying a modulated high frequency signal in a second frequency band; a first transistor for output detection for receiving an input signal of said first power amplification transistor and a first current mirror circuit for passing current at a first ratio to current of the transistor; a second transistor for output detection for receiving an input signal of said second power amplification transistor and a second current mirror circuit for passing current at a second ratio, which is different from said first ratio, to current of the transistor; and a converting circuit commonly connected to said first and second current mirror circuits and converting current to voltage, wherein a bias control circuit for comparing an output signal of said converting circuit with an output request level instruction signal and generating a bias current of said first power amplification transistor. - View Dependent Claims (16, 17)
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Specification