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Enhanced process and profile simulator algorithms

  • US 7,139,632 B2
  • Filed: 09/01/2004
  • Issued: 11/21/2006
  • Est. Priority Date: 03/03/1998
  • Status: Expired due to Fees
First Claim
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1. A plasma chamber comprising:

  • a chamber;

    a first power supply;

    a second power supply;

    a gas supply and exhaust;

    an inductor on top of said chamber, said inductor coupled to said first power supply;

    an electrode inside said chamber, said electrode coupled to said second power supply;

    a first power controller coupled to said first power supply;

    a second power controller coupled to said second power supply;

    a pressure controller coupled to said gas supply and exhaust; and

    a computer coupled to said first power controller, said second power controller, said pressure controller,wherein said computer predictively calculates a surface profile to be created on a substrate by a plasma process sequence,wherein said computer tracks an energetic particle,wherein said computer records a plurality of ion fluxes from said energetic particle,wherein said computer solves simultaneously for a plurality of neutral fluxes, a surface chemical coverage, a surface material type, andwherein said computer computes a local etch rate and a local deposition rate from said plurality of ion fluxes, said plurality of neutral fluxes, said surface chemical coverage, said surface material type.

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