Method of producing silicon-germanium-on-insulator material using unstrained Ge-containing source layers

• US 7,141,115 B2
• Filed: 09/02/2004
• Issued: 11/28/2006
• Est. Priority Date: 09/02/2004
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Bedell, Stephen W., Fogel, Keith E., Sadana, Devendra K.
• Primary Examiner(s): HITESHEW, FELISA CARLA
• Application Number:
  US10/932,598
• Publication Number:
  US 20060042542A1
• Time in Patent Office: 817 Days
• Field of Search: 117/89, 117/92, 117/102, 117/105
• US Class Current: 117/92
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond

Abstract

A method of fabricating a high-quality relaxed SiGe-on-insulator substrate material is provided in which a prefabricated silicon-on-insulator substrate is first exposed to an unstrained Ge-containing source and then heated (annealed/oxidized) to cause Ge diffusion and thermal mixing of Ge within a single-crystal Si-containing layer of the prefabricated silicon-on-insulator substrate. The unstrained Ge-containing source can comprise a solid Ge-containing source, a gaseous Ge-containing source, or ions of Ge.

Claims

1. A method of fabricating a relaxed, high-quality single-crystal SiGe-on-insulator substrate material comprising the steps of:

exposing a single-crystal Si-containing layer of a prefabricated silicon-on-insulator substrate to an unstrained Ge-containing source; and

heating the substrate exposed to said unstrained Ge-containing source to cause diffusion of Ge provided by said unstrained Ge-containing source into said single-crystal Si-containing layer thereby forming a relaxed, single-crystal SiGe alloy layer on a barrier layer of said prefabricated SOI substrate.

2. The method of claim 1 wherein said silicon-on-insulator is formed by a layer transfer process.

3. The method of claim 1 wherein said silicon-on-insulator is formed by a separation by an ion implantation of oxygen process.

4. The method of claim 1 wherein said barrier layer is resistant to Ge diffusion.

5. The method of claim 4 wherein said barrier layer comprises a crystalline or non-crystalline oxide or nitride.

6. The method of claim 1 wherein said Si-containing layer comprises a semiconductor material containing Si.

7. The method of claim 6 wherein said Si-containing layer comprises Si, SiGe, SiC, SiGeC, Si/Si, Si.SiGe, Si/SiGeC or a preformed silicon-on-insulator containing any number of buried insulating layers that can be patterned, unpatterned or both patterned and unpatterned.

8. The method of claim 7 wherein said Si-containing layer comprises Si.

9. The method of claim 1 wherein said unstrained Ge-containing source comprises a solid Ge-containing source, a gaseous Ge-containing source or Ge-containing ions.

10. The method of claim 9 wherein said unstrained Ge-containing source comprises said solid Ge-containing source.

11. The method of claim 10 wherein said solid Ge-containing source comprises Ge-containing glasses, amorphous Ge-containing materials, or polycrystalline Ge-containing materials and mixtures thereof.

12. The method of claim 10 wherein said solid Ge-containing source is an unstrained Ge-containing layer formed atop the single crystal Si-containing layer by deposition.

13. The method of claim 9 wherein said unstained Ge-containing source comprises said gaseous Ge-containing source.

14. The method of claim 13 wherein said gaseous Ge-containing source comprises a mixture of GeH₄ and HCl.

15. The method of claim 13 wherein said gaseous Ge-containing source is provided at a temperature from about 550°

to about 1150°

C., a flow rate from about 5 to about 5000 sccm, and a time period from about 1 to about 100 minutes.

16. The method of claim 9 wherein said unstrained Ge-containing source comprises said ions of Ge.

17. The method of claim 16 wherein said ions of Ge are provided by ion implantation.

18. The method of claim 17 wherein said ion implantation is performed at a Ge ion dose from about 1×

10¹⁶ to about 5×

10¹⁷ atoms/cm³, and a energy from about 10 to about 100 keV.

19. The method of claim 1 further comprising patterning the silicon-on-insulator wafer prior to the exposing step or following the exposing step.

20. The method of claim 1 wherein said heating is performed at a temperature from about 900°

to about 1350°

C. in an oxidizing ambient.

21. The method of claim 20 wherein said oxidizing ambient includes an oxygen-containing gas that is optionally diluted with an inert gas.

22. The method of claim 1 wherein said heating is performed at a temperature from about 1200°

to about 1320°

C. in a diluted oxygen-containing gas.

23. The method of claim 1 wherein said heating forms a surface oxide layer that is resistant to Ge diffusion.

24. The method of claim 1 further comprising forming at least one strained semiconductor layer on the relaxed, single-crystal SiGe alloy layer.