Apparatus and method for measuring a property of a layer in a multilayered structure

• US 7,141,440 B2
• Filed: 05/02/2005
• Issued: 11/28/2006
• Est. Priority Date: 03/01/2002
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Borden, Peter G., Li, Ji Ping
• Primary Examiner(s): Picardat, Kevin M.
• Application Number:
  US11/120,427
• Publication Number:
  US 20050200850A1
• Time in Patent Office: 575 Days
• Field of Search: 438/5, 438/7, 438/14, 438/15, 438/16, 438/17, 438/10, 356/237.2, 356/237.3, 356/237.4, 356/237.5
• US Class Current: 438/5
• CPC Class Codes: G01N 21/1717 with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
• CPC Class Codes: G01N 27/041 of a solid body

Abstract

A property of a layer is measured by: (1) focusing a heating beam on a region (also called “heated region”) of a conductive layer (2) modulating the power of the heating beam at a predetermined frequency that is selected to be sufficiently low to ensure that at any time the temperature of an optically absorbing layer is approximately equal to (e.g., within 90% of) a temperature of the optically absorbing layer when heated by an unmodulated beam, and (3) measuring the power of another beam that is (a) reflected by the heated region, and (b) modulated in phase with modulation of the heating beam. The measurement in act (3) can be used directly as a measure of the resistance (per unit area) of a conductive pad formed by patterning the conductive layer. Change in measurement across regions indicates a corresponding change in resistance of the layer.

Claims

1. A method for evaluating a structure having a first layer and at least one underlying layer in contact with the first layer, the method comprising:

illuminating a region of the first layer with a beam of electromagnetic radiation;

wherein the first layer comprises at least one crystalline phase from among a plurality of crystalline phases of a compound of a material comprised in said underlying layer;

measuring a signal corresponding to a temperature change in the first layer caused by absorption of energy from the beam of electromagnetic radiation;

using a relationship between said measured temperature change and an electrical conductive property of said first layer, said electrical conductive property depending on crystalline phase.

2. The method of claim 1 wherein:

the beam of electromagnetic radiation is modulated at a predetermined frequency smaller than a maximum frequency beyond which nonlinearities in temperature response of said region become measurable.

3. The method of claim 2 wherein:

said maximum frequency is approximately 100 kHz.

4. The method of claim 1 further comprising:

changing a process parameter used in fabricating said structure in response to at least a predetermined change in said signal measured in multiple regions across said structure.

5. The method of claim 2 wherein the predetermined frequency is less than:

$\frac{k}{2<br><br>\mathrm{\pi <br><br>\rho <br><br>}<br><br><br><br>c<br><br><br><br>{\mathrm{\lambda <br><br>}}^2}$

wherein;

k is thermal conductivity of the region;

ρ

is the density of the region;

c is the specific heat; and

λ

is wavelength of a wave solution to a diffusion equation for heat transfer from the region.

6. The method of claim 1 wherein said using comprises:

comparing the power obtained from said measuring with a predetermined limit.

7. The method of claim 2 wherein:

said measuring includes using a lock-in amplifier tuned to said predetermined frequency.

8. The method of claim 1 wherein:

said measuring comprises use of a second beam; and

said measuring also includes using a narrow band filter tuned to the wavelength of said second beam.

9. The method of claim 1 wherein said region is hereinafter referred to as “

first region”

, the method further comprising;

focusing the beam of electromagnetic radiation on a second region different from said first region; and

repeating said measuring in said second region.

10. The method of claim 9 further comprising:

changing a process parameter used in fabricating said structure if the power measured in said region is nonuniform relative to the power measured in said second region.

11. The method of claim 8 wherein:

the second power is sufficiently low to ensure that less than 10% of heat generated in said region is due to the second beam.

12. The method of claim 2 wherein:

wherein the predetermined frequency is sufficiently low to ensure that an instantaneous temperature in said region is approximately equal to another temperature obtained in said region by heating with an unmodulated beam having a power equal to an instantaneous value of power of said beam of electromagnetic radiation.

13. The method of claim 1 wherein:

the first layer is one of polysilicon and polycide, and said at least one underlying layer is an insulator layer located between said first layer and an underlying substrate.

14. The method of claim 1 wherein:

the first layer has an optical absorption coefficient α

that is several orders of magnitude greater than the corresponding absorption coefficient of said underlying layer.

15. The method of claim 1 wherein:

the first layer comprises silicon germanium.

16. The method of claim 1 wherein:

the first layer is less thermally conductive than the underlying layer.

17. The method of claim 1 wherein:

the underlying layer comprises a semiconductor.

18. The method of claim 1 wherein:

the compound in said first layer is a metal compound.

19. The method of claim 18 wherein:

the metal compound is nickel silicide.

20. The method of claim 18 wherein:

the metal compound is cobalt suicide.

21. The method of claim 1 wherein:

the electrical conductive property is sheet resistance.

22. The method of claim 1 wherein:

the underlying layer comprises polysilicon.

23. A method for evaluating a structure having a first layer and at least one underlying layer in contact with the first layer, the method comprising:

illuminating a region of the first layer with a beam;

wherein the first layer comprises at least one crystalline phase from among a plurality of crystalline phases of a compound of a material comprised in said underlying layer;

measuring a signal corresponding to a temperature change in the first layer caused by absorption of energy from the beam;

using a relationship between said measured temperature change and an electrical conductive property of said first layer, said electrical conductive property depending on crystalline phase.

24. The method of claim 23 wherein said beam comprises electrons.

25. The method of claim 23 wherein:

said beam comprises electromagnetic radiation; and

said measuring comprises use of a second beam of electromagnetic radiation.

26. The method of claim 23 wherein:

said measuring is performed during a scan along a patterned line in said structure.

27. The method of claim 23 wherein:

said measuring is performed during a scan along an array of patterned lines in said structure.

28. The method of claim 23 wherein said region is hereinafter referred to as “

first region”

, the method further comprising;

focusing the beam on a second region different from said first region; and

repeating said measuring in said second region.

29. The method of claim 23 further comprising:

changing a process parameter used in fabricating said structure, depending on said signal.

30. The method of claim 23 wherein:

the first layer is less thermally conductive than the underlying layer.

31. The method of claim 23 wherein:

the electrical conductive property is sheet resistance.

32. The method of claim 23 wherein:

the first layer has an optical absorption coefficient α

that is several orders of magnitude greater than the corresponding absorption coefficient of said underlying layer.

33. The method of claim 23 wherein:

the underlying layer comprises a semiconductor.

34. The method of claim 23 wherein:

the compound in said first layer is a metal compound.

35. An apparatus for evaluating a structure having a first layer and at least one underlying layer in contact with the first layer, the apparatus comprising:

means for illuminating a region of the first layer with a beam;

wherein the first layer comprises at least one crystalline phase from among a plurality of crystalline phases of a compound of a material comprised in said underlying layer;

means for measuring a signal corresponding to a temperature change in the first layer caused by absorption of energy from the beam; and

means for using a relationship between said measured temperature change and an electrical conductive property of said first layer, said electrical conductive property depending on crystalline phase.