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Semiconductor light emitting device capable of suppressing silver migration of reflection film made of silver

  • US 7,141,825 B2
  • Filed: 10/19/2004
  • Issued: 11/28/2006
  • Est. Priority Date: 03/29/2004
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting device comprising:

  • a luminous lamination structure including a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer, wherein a luminous region is defined between the first and second layers and the second layer is removed to expose the first layer in a first area which is a partial surface of the first layer;

    a p-side electrode disposed on a surface of the second layer and electrically connected to the second layer;

    an insulating film covering the p-side electrode;

    an n-side electrode electrically connected to the first layer in the first area;

    a reflection film disposed on the insulating film, extending to the n-side electrode, electrically connected to the n-side electrode, and made of a silver containing alloy or silver; and

    a conductive layer which is formed on a surface of the reflection film, and which is made of a metal having a larger ionization tendency than an ionization tendency of the reflection film.

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