Semiconductor light emitting device capable of suppressing silver migration of reflection film made of silver
First Claim
1. A semiconductor light emitting device comprising:
- a luminous lamination structure including a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer, wherein a luminous region is defined between the first and second layers and the second layer is removed to expose the first layer in a first area which is a partial surface of the first layer;
a p-side electrode disposed on a surface of the second layer and electrically connected to the second layer;
an insulating film covering the p-side electrode;
an n-side electrode electrically connected to the first layer in the first area;
a reflection film disposed on the insulating film, extending to the n-side electrode, electrically connected to the n-side electrode, and made of a silver containing alloy or silver; and
a conductive layer which is formed on a surface of the reflection film, and which is made of a metal having a larger ionization tendency than an ionization tendency of the reflection film.
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Accused Products
Abstract
A luminous lamination structure includes a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer wherein a luminous region is defined between the first and second layers. The second layer is removed to expose the first layer in a first area which is a partial surface of the first layer. A p-side electrode is disposed on a surface of the second layer and electrically connected to the second layer. An insulating film covers the p-side electrode. An n-side electrode electrically connected to the first layer is disposed in the first area. A reflection film disposed on the insulating film extends to the n-side electrode and electrically connected to the n-side electrode. The reflection film is made of silver containing alloy or silver.
87 Citations
20 Claims
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1. A semiconductor light emitting device comprising:
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a luminous lamination structure including a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer, wherein a luminous region is defined between the first and second layers and the second layer is removed to expose the first layer in a first area which is a partial surface of the first layer; a p-side electrode disposed on a surface of the second layer and electrically connected to the second layer; an insulating film covering the p-side electrode; an n-side electrode electrically connected to the first layer in the first area; a reflection film disposed on the insulating film, extending to the n-side electrode, electrically connected to the n-side electrode, and made of a silver containing alloy or silver; and a conductive layer which is formed on a surface of the reflection film, and which is made of a metal having a larger ionization tendency than an ionization tendency of the reflection film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor light emitting device comprising:
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a luminous lamination structure including a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer, wherein a luminous region is defined between the first and second layers and the second layer is removed to expose the first layer in a first area which is a partial surface of the first layer; a p-side electrode disposed on a surface of the second layer, electrically connected to the second layer, and transmitting light irradiated from the luminous region; an insulating film covering the p-side electrode; an n-side electrode electrically connected to the first layer in the first area; a reflection film disposed on the insulating film, extending to the n-side electrode, electrically connected to the n-side electrode, and which reflects light irradiated from the luminous region; and a conductive layer which is formed on a surface of the reflection film, and which is made of a metal having a larger ionization tendency than an ionization tendency of the reflection film. - View Dependent Claims (14)
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15. A semiconductor light emitting device comprising:
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a luminous lamination structure including a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer, wherein a luminous region is defined between the first and second layers and the second layer is removed to expose the first layer in a first area which is a partial surface of the first layer; a p-side electrode disposed on a surface of the second layer and electrically connected to the second layer; an insulating film covering the p-side electrode; an n-side electrode electrically connected to the first layer in the first area; a reflection film disposed on the insulating film, made of a silver containing alloy or silver, and made in an electrically floating state so as to be connected neither to the p-side electrode nor to the n-side electrode; and a conductive layer which is formed on a surface of the reflection film, and which is made of a metal having a larger ionization tendency than an ionization tendency of the reflection film. - View Dependent Claims (16, 17, 18)
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19. A semiconductor light emitting device comprising:
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a luminous lamination structure including a first layer made of n-type nitride semiconductor and a second layer made of p-type nitride semiconductor and disposed over the first layer, wherein a luminous region is defined between the first and second layers and the second layer is removed to expose the first layer in a first area which is a partial surface of the first layer; a p-side electrode disposed on a surface of the second layer, electrically connected to the second layer, and transmitting light irradiated from the luminous region; an insulating film covering the p-side electrode; an n-side electrode electrically connected to the first layer in the first area; a reflection film disposed on the insulating film, made in an electrically floating state so as to be connected neither to the p-side electrode nor to the n-side electrode, and which reflects light irradiated from the luminous region; and a conductive layer which is formed on a surface of the reflection film, and which is made of a metal having a larger ionization tendency than an ionization tendency of the reflection film. - View Dependent Claims (20)
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Specification