Method of making diode structures
First Claim
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1. The method of making a diode structure comprising:
- depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer;
depositing an active polycrystalline semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer, in which the depositing of the n-type layer is carried out with a sputtering process; and
applying a back electrode coating layer to form a diode structure.
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Abstract
A method of making a diode structure includes the step of depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer, and depositing an active semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer. A back electrode coating layer is applied to form a diode structure.
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Citations
38 Claims
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1. The method of making a diode structure comprising:
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depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer; depositing an active polycrystalline semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer, in which the depositing of the n-type layer is carried out with a sputtering process; and applying a back electrode coating layer to form a diode structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. The method of making a diode structure comprising:
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depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a flexible layer; depositing an active polycrystalline semiconductor junction having an n-type layer and a p-type layer onto the substrate layer under process conditions that avoid substantial degradation of the electrode layer, in which the depositing of the n-type layer is carried out with a sputtering process; and applying a back coating electrode layer to form a diode structure. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
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22. The method of making a diode structure comprising:
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depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer; scribing the transparent electrode layer into sections; depositing an active polycrystalline semiconductor junction having an n-type layer and a p-type layer onto the transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer, in which the depositing of the n-type layer is carried out with a sputtering process; scribing the active semiconductor junction into sections; applying a back electrode coating layer to form a diode structure; and scribing the back electrode coating layer into sections; wherein a series of cells is formed, with each of the cells comprising one of the electrode layer sections, one of the active semiconductor junction sections, and one of the back electrode coating layer sections, and wherein the series of cells is electrically connected in series to form a monolithically integrated solar panel. - View Dependent Claims (23, 24, 25, 26, 27, 33)
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28. The method of making a diode structure having a substrate configuration comprising:
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applying a back electrode coating layer to a polymer substrate; depositing an active polycrystalline semiconductor junction having a p-type layer and an n-type layer onto the back electrode coating layer under process conditions that avoid substantial degradation of the polymer substrate, in which the depositing of the n-type layer is carried out with a sputtering process; and depositing a transparent electrode layer of any one or more of the group ZnO, ZnS and CdO onto the semiconductor junction to form a diode structure. - View Dependent Claims (29, 30, 31, 32)
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34. The method of making a tandem diode structure comprising:
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depositing the first transparent front electrode layer of any one or more of the group ZnO, ZnS and CdO onto a substrate layer; depositing the first active semiconductor junction having an n-type layer and a p-type layer onto the first transparent electrode layer under process conditions that avoid substantial degradation of the electrode layer; depositing a first back transparent electrode coating layer under process conditions that avoid substantial degradation of the top electrode layer, to form a first diode structure and to form a first layer of a tunnel junction; applying a second transparent front electrode coating layer of any one or more of the group ZnO, ZnS and CdO onto the back transparent coating layer of the top cell under process conditions that avoid substantial degradation of the top electrode layer, with the second transparent electrode coating layer completing the tunnel junction; depositing a second active semiconductor junction having an n-type layer and a p-type layer onto the second transparent electrode layer under process conditions that avoid substantial degradation of both the first and second transparent electrode coating layers; and applying a second back electrode coating layer to form a second diode structure and to complete the tandem diode structure. - View Dependent Claims (35, 36, 37, 38)
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Specification