Conformal retro-modulator optical devices

• US 7,142,348 B2
• Filed: 06/15/2005
• Issued: 11/28/2006
• Est. Priority Date: 10/21/2002
• Status: Active Grant

• Current Assignee: HRL Laboratories LLC (The Boeing Co.)
• Original Assignee: HRL Laboratories LLC (The Boeing Co.)
• Inventors: Sayyah, Keyvan, Brewer, Peter D., Pepper, David M., Au, Anson
• Primary Examiner(s): Sugarman, Scott J.
• Assistant Examiner(s): HASAN, MOHAMMED A
• Application Number:
  US11/153,977
• Publication Number:
  US 20060239696A1
• Time in Patent Office: 531 Days
• Field of Search: 359/291, 359/292, 359/295, 359/298, 359/316, 359/318, 359/319, 359/320, 359/237, 359/248, 250/208.1, 250/214.R
• US Class Current: 359/291
• CPC Class Codes: G01S 17/74 Systems using reradiation of electromagnetic waves other than radio waves, e.g. IFF, i.e. identification of friend or foe
• CPC Class Codes: G02B 5/12 Reflex reflectors
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/6835 used as a support during build up manufacturing of active devices
• CPC Class Codes: H01L 2224/24051 Conformal with the semiconductor or solid-state device
• CPC Class Codes: H01L 2224/24226 the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 24/18 High density interconnect [HDI] connectors; Manufacturing methods related thereto interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/82 by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/96 the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 27/14647 Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/12043 Photo diode
• CPC Class Codes: H01L 2924/1461 MEMS
• CPC Class Codes: H01L 2924/30105 Capacitance
• CPC Class Codes: H01L 2924/3511 Warping
• CPC Class Codes: H04B 10/112 Line-of-sight transmission over an extended range
• CPC Class Codes: H04B 10/2587 using a single light source for multiple stations

Abstract

A conformal retro-modulator optical apparatus. The apparatus includes an array of multiple quantum well devices disposed in a thin array. A plastic support element is bonded to the thin array, the plastic support element having a thickness greater that of the thin array. The plastic support element is preferably plastic at elevated temperatures above room temperature, thereby allowing the plastic support element and the thin array of multiple well device disposed therein to conform to a predetermined shape, yet being rigid at room temperature.

Claims

1. A method of addressing an array of AFP MQW pixels having first and second sets of electrodes comprising:

(a) scanning the first set of electrodes to detect any sensing current resulting from the photoactivation of a pixel while the second set of electrodes is scanned with a small negative voltage;

(b) if a pixel is detected in step (a) as being photoactivated, sampling any data received by the photoactivated pixel in handshaking protocol to determine whether a party photoactivating the photoactivated pixel is friend or foe;

(c) if the photoactivated pixel is turned on by a friend, applying a modulating voltage waveform to a corresponding electrode in the second set of electrodes corresponding photoactivated pixel;

(d) if the photoactivated pixel is turned on by a foe, a voltage V, which is a zero reflection bias for the photoactivated pixel, is applied to a corresponding electrode in the second set of electrodes corresponding photoactivated pixel.

2. A method of optically repeating or relaying data comprising:

disposing a two-dimensional array of modulator and/or detector pixels in a predetermined configuration, the modulator and/or detector pixels responding to applied electrical signals to modulate and reflect light impinging the modulator and/or detector pixels;

directing a first incoming optical beam from a first optical transmitter onto a first selected one or ones of said modulator and/or detector pixels in said array, the first incoming optical beam being modulated with data;

directing a second incoming optical beam from a second optical transmitter onto a second selected one or ones of said modulator and/or detector pixels in said arrays;

detecting the data on the first incoming optical beam; and

modulating the second incoming beam at said second selected one or ones of said modulator and/or detector pixels in said array using said data;

wherein the second incoming beam is reflected at said second selected one or ones of said modulator and/or detector pixels via the optical arrangement back to said second optical transmitter and is modulated by said data.

3. The method of claim 2 wherein the two dimensional array of modulator and/or detector pixels is disposed in a hemispherical configuration.

4. The method of claim 2 further including temporarily storing data received from one source and modulating a beam from another source with the temporarily stored data.

5. A method of optically relaying data comprising:

disposing a two dimensional array of modulator and/or detector pixels in a predetermined configuration, the modulator and/or detector pixels responding to applied electrical signals to modulate and reflect light impinging the modulator and/or detector pixels;

directing a first incoming optical beam from a first optical transmitter onto a first selected one or ones of said modulator and/or detector pixels in said array, the first incoming optical beam being modulated with data;

directing a second incoming optical beam from a second optical transmitter onto a second selected one or ones of said modulator and/or detector pixels in said array;

storing the data on the first incoming optical beam in memory; and

modulating the second incoming beam at said second selected one or ones of said modulator and/or detector pixels in said array using said data stored in said memory;

wherein the second incoming beam is reflected at said second selected one or ones of said modulator and/or detector pixels via the optical arrangement back to said second optical transmitter.

6. A method of operating a Fabry-Perot multiple quantum well structure both as an optical modulator and as an optical detector by fixing its electrical bias potential for maximum detection performance when operating as a detector and for optimum contrast ratio when operating as a modulator.

7. The method of claim 6 within the Fabry-Perot multiple quantum well structure includes a pin diode structure and an associated optically activated switch, the associated optically activated switch being switched on in response to an incoming optical beam allowing the pin diode of the Fabry-Perot multiple quantum well to generate a sensing current.

8. A method of addressing an array of AFP MQW pixels having first and second sets of electrodes comprising:

(a) scanning the first and second sets of electrodes to detect any sensing current resulting from the photoactivation of a pixel;

(b) if a pixel is determined in step (a) as being photoactivated, detecting data received by the photoactivated pixel in handshaking protocol to determine whether a party photoactivating the photoactivated pixel is friend or foe;

(c) if the photoactivated pixel is activated by a friend, applying a modulating voltage is applied to the photoactivated pixel; and

(d) if the photoactivated pixel is turned on by a foe, the photoactivated pixel receives a zero reflection bias.