Method for creating alternating phase masks

• US 7,143,390 B2
• Filed: 06/30/2004
• Issued: 11/28/2006
• Est. Priority Date: 06/30/2003
• Status: Expired due to Fees

• Current Assignee: Polaris Innovations Limited (Wi-LAN Inc.)
• Original Assignee: Infineon Technologies AG
• Inventors: Moukara, Molela
• Primary Examiner(s): Kik, Phallaka
• Application Number:
  US10/881,703
• Publication Number:
  US 20050028131A1
• Time in Patent Office: 881 Days
• Field of Search: 716/21, 430/5, 378/35, 700/120, 700/121
• US Class Current: 716/52
• CPC Class Codes: G03F 1/30 Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof

Abstract

A method is provided for creating a phase mask for lithographic exposure operations. In this case, phase-shifting regions (10) with a different phase are defined on both sides of critical structures (6), which fall below an extent limit. At least one phase shifter correction is carried out such that at least two mutually facing phase-shifting regions (10) are joined together to form a contiguous phase-shifting region (10) if their distance from one another falls below a predetermined minimum distance.

Claims

1. A method for creating a phase mask for lithographic exposure operations, the method comprising:

determining locations of a plurality of critical structures, each critical structure including at least two sides;

defining phase-shifting regions on the two sides of ones of the critical structures that fall below an extent limit; and

carrying out at least one phase shifter correction such that at least two mutually facing phase-shifting regions, of the defined phase-shifting regions, are joined together to form a contiguous phase-shifting region if their distance from one another falls below a predetermined minimum distance.

2. The method as claimed in claim 1, and further comprising:

after at least one phase shifter correction has been carried out, checking the phase mask for a presence of conflict centers, wherein an inner contour of a contiguous region, in which the inner contour is adjoined externally exclusively by phase-shifting regions and an odd number of critical structures, is interpreted as a conflict center; and

eliminating at least one conflict center present by eliminating at least one phase-shifting region that adjoins the conflict center being separated into two phase-shifting regions with a different phase.

3. The method as claimed in claim 2 wherein, during the separation of at least one phase-shifting region, the phase-shifting regions that are newly formed are arranged in a manner adjoining one another.

4. The method as claimed in claim 2 wherein, during the separation of at least one phase-shifting region, the phase-shifting regions that are newly formed are arranged spaced apart, an intermediate region being covered with a light-opaque material or an intermediate region being assigned an intermediate phase.

5. The method as claimed in claim 2 wherein, after a combination of at least two phase-shifting regions or a separation of at least one phase-shifting region, phases are assigned for the phase-shifting regions in such a way as to maximize a number of phase-shifting regions with a different phase on the two sides of a critical structure.

6. The method as claimed in claim 1 wherein the at least one phase shifter correction is carried out in order that an interaction region is avoided by merging of at least two phase-shifting regions.

7. The method as claimed in claim 1 wherein the at least one phase shifter correction is carried out in order that predetermined phase mask boundary conditions are implemented.

8. The method as claimed in claim 1 wherein the at least one phase shifter correction is carried out in order that a corner of at least one phase-shifting region is made possible which has an angle other than 0°

, 45°

, or 90°

with respect to a phase mask main direction, at which the phase mask is oriented.

9. The method as claimed in claim 1 wherein the at least one phase shifter correction is carried out in order that holes in the phase mask which cannot be realized or can only be realized in a complicated manner are prevented.

10. The method as claimed in claim 1 wherein the at least one phase shifter correction is carried out in order that phase-shifting regions at ends of critical structures are modified in order to avoid shortening effects at ends of critical structures.

11. The method as claimed in claim 1 wherein the at least one phase shifter correction is carried out in order that a separation is effected along a connecting path between at least two conflict region centers.

12. The method as claimed in claim 1 wherein a separation is effected along a connecting pat between at least one conflict center and a contour—

remote from the conflict center—

of the contiguous region comprising critical structures and phase-shifting regions, said contiguous region adjoining the conflict center.

13. The method as claimed in claim 1 wherein the phase mask is created by means of a computer program containing a generation program of phase-shifting regions.

14. The method as claimed in claim 1 wherein, before phase shifter corrections are carried out on the two sides of critical structures, phase-shifting regions of constant width are defined, the constant width having been determined beforehand by an optical simulation program.

15. The method as claimed in claim 1 wherein a separation of at least one phase-shifting region is effected such that a maximum number of forbidden zones containing important circuit functionalities are free of conflict regions.

16. The method as claimed in claim 1 wherein a bright field or dark field phase mask is created as the phase mask.

17. The method as claimed in claim 1 wherein a chromiumless phase mask is created as the phase mask.

18. The method as claimed in claim 1 wherein the phase-shifting regions used have precisely two different phases.

19. The method as claimed in claim 18 wherein the two phases are shifted by 180′

relative to one another.

20. The method as claimed in claim 1 wherein a separation is effected along a connecting path which is determined by at least one stencil element from a previously defined set of stencil elements with connecting paths for predetermined layout stipulations.

21. The method as claimed in claim 20 wherein, prior to selection of the stencil element or stencil elements to be used, the stencil elements from the previously defined set of stencil elements that lie in a forbidden zone are rejected.

22. The method as claimed in claim 20 wherein the phase shifter corrections performed are used as stencil elements.

23. The method as claimed in claim 20 wherein a number of stencil elements used for creating separations is minimized.

24. A method of using of a phase mask produced according to the method of claim 1, the method of using comprising using the mask to produce a portion of a semiconductor circuit.

25. The method of using of claim 24 wherein undesirable imperfections that have arisen after an exposure operation carried out with the phase mask are subjected to further treatment with trimming masks.