Electron beam lithography method using new material

• US 7,144,680 B2
• Filed: 09/08/2005
• Issued: 12/05/2006
• Est. Priority Date: 12/24/2004
• Status: Expired due to Fees

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Park, Jong-bong, Choi, Chel-jong
• Primary Examiner(s): Young, Christopher G.
• Application Number:
  US11/220,697
• Publication Number:
  US 20060141396A1
• Time in Patent Office: 453 Days
• Field of Search: 430/296, 430/942
• US Class Current: 430/296
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G03C 5/00 Photographic processes or agents therefor; Regeneration of such processing agents multicolour processes or agents therefor G03C7/00; diffusion-transfer processes or agents therefor G03C8/00; stereo-photographic processes G03C9/00; photomechanical processes G03F
• CPC Class Codes: G03F 7/0043 Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof G03F7/0044 takes precedence
• CPC Class Codes: G03F 7/167 from the gas phase, by plasma deposition G03F7/2035 takes precedence
• CPC Class Codes: H01J 2237/3174 Etching microareas
• CPC Class Codes: H01J 2237/31754 using electron beams
• CPC Class Codes: H01J 2237/31796 affecting resists
• CPC Class Codes: H01J 37/3174 Particle-beam lithography, e.g. electron beam lithography
• CPC Class Codes: Y10S 430/143 Electron beam

Abstract

An electron beam (EB) lithography method using a new material is provided. The method includes forming a thin layer using a Pb-based material; and patterning the thin layer by partially volatilizing the thin layer by irradiating electron beams. In this method, the thin layer formed of the Pb-based material is patterned using e-beams so that the linewidth of patterns formed on the thin layer can be greatly reduced.

Claims

1. An electron beam lithography method comprising:

forming a thin layer using a Pb-based material; and

patterning the thin layer by partially volatilizing the thin layer by irradiating electron beams.

2. The method of claim 1, wherein the Pb-based material is one selected from the group consisting of Pb, PbO, and PbTi.

3. The method of claim 1, wherein the patterning of the thin layer is performed using an electron beam apparatus with an electron beam source and a condenser lens.

4. The method of claim 3, wherein the electron beam apparatus is a transmission electron microscope (TEM) apparatus.

5. An electron beam lithography method comprising:

preparing a substrate;

forming a thin layer by depositing a Pb-based material on the substrate;

obtaining the thin layer by removing the substrate; and

patterning the thin layer by partially volatilizing the thin layer by irradiating electron beams.

6. The method of claim 5, wherein the forming of the thin layer is performed using physical vapor deposition (PVD) or chemical vapor deposition (CVD).

7. The method of claim 5, wherein the thin layer is formed to a thickness of less than about 100 nm.

8. The method of claim 5, wherein the Pb-based material is one selected from the group consisting of Pb, PbO, and PbTi.

9. The method of claim 5, wherein the substrate is formed of polycarbonate or sodium chloride (NaCl).

10. The method of claim 9, wherein the obtaining of the thin layer includes removing the substrate using chloroform if the substrate is a polycarbonate substrate,

and the obtaining of the thin layer includes removing the substrate using water if the substrate is a sodium chloride substrate.

11. The method of claim 5, wherein the patterning of the thin layer is performed using an electron beam apparatus with an electron beam source and a condenser lens.

12. The method of claim 11, wherein the electron beam apparatus is a transmission electron microscope (TEM) apparatus.

13. An electron beam lithography method comprising:

preparing a substrate;

forming a Pb-based material layer by depositing a Pb-based material on the substrate to a predetermined thickness;

forming a thin layer by severing the Pb-based material layer and the substrate in a direction normal to a surface of the substrate; and

patterning the thin layer by partially volatilizing the thin layer by irradiating electron beams.

14. The method of claim 13, wherein the forming of the Pb-based material layer is performed using physical vapor deposition (PVD) or chemical vapor deposition (CVD).

15. The method of claim 13, wherein the Pb-based material layer is formed to a thickness of about 1 to about 100 μ

m.

16. The method of claim 13, wherein the Pb-based material is one selected from the group consisting of Pb, PbO, and PbTi.

17. The method of claim 13, wherein the forming of the thin layer includes severing the Pb-based material layer and the substrate in a direction normal to a surface of the substrate using a focused ion beam (FIB) apparatus.

18. The method of claim 13, wherein the thin layer is formed to a thickness of less than about 100 nm.

19. The method of claim 13, wherein the patterning of the thin layer is performed using an electron beam apparatus with an electron beam source and a condenser lens.

20. The method of claim 19, wherein the electron beam apparatus is a transmission electron microscope (TEM) apparatus.