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Method for forming pattern using photomask

  • US 7,144,684 B2
  • Filed: 12/21/2005
  • Issued: 12/05/2006
  • Est. Priority Date: 04/30/2002
  • Status: Expired due to Fees
First Claim
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1. A method for forming a pattern that uses a photomask, comprising the steps of:

  • forming a resist film on a substrate;

    irradiating the resist film with exposure light via the photomask; and

    developing the resist film irradiated with the exposure light so as to pattern the resist film,wherein the photomask comprises on a transparent substrate;

    a semi-light-shielding portion having a light-shielding property with respect to the exposure light;

    a light-transmitting portion surrounded by the semi-light-shielding portion and having a light-transmitting property with respect to the exposure light; and

    a peripheral portion surrounded by the semi-light-shielding portion and positioned in a periphery of the light-transmitting portion,the semi-light-shielding portion and the light-transmitting portion transmit the exposure light in a same phase,the peripheral portion transmits the exposure light in a phase opposite to that of the semi-light-shielding portion and the light-transmitting portion,a phase shift film that has a transmittance that allows the exposure light to be transmitted partially and transmits the exposure light in a phase opposite to that of the peripheral portion is formed on the transparent substrate in a formation region for the semi-light-shielding portion, anda surface of the transparent substrate in a formation region for the peripheral portion is exposed.

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