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Method of submicron metallization using electrochemical deposition of recesses including a first deposition at a first current density and a second deposition at an increased current density

  • US 7,144,805 B2
  • Filed: 07/01/2004
  • Issued: 12/05/2006
  • Est. Priority Date: 02/04/1998
  • Status: Expired due to Fees
First Claim
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1. A method for depositing a metal into a micro-recessed structure in the surface of a microelectronic workpiece, the method comprising:

  • contacting the surface of the microelectronic workpiece with an electroplating solution in an electroplating cell, the electroplating cell including a cathode formed by the surface of the microelectronic workpiece and an anode;

    electroplating to deposit a metal into the micro-recessed structure by applying a first electroplating waveform having a first current to the anode to enhance deposition of the metal at a bottom of the micro-recessed structure; and

    further electroplating to further deposit the metal by changing the waveform applied to the anode to a second electroplating waveform having a second current to change the time required to at least substantially fill of the micro-recessed structure, wherein the second current is greater than the first current.

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