Method for fabricating semiconductor device and semiconductor substrate

• US 7,144,829 B2
• Filed: 04/13/2004
• Issued: 12/05/2006
• Est. Priority Date: 07/29/2003
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Yoneda, Kenji
• Primary Examiner(s): Everhart, Caridad
• Application Number:
  US10/822,722
• Publication Number:
  US 20050026461A1
• Time in Patent Office: 966 Days
• Field of Search: 438/795, 438/473, 438/474, 257/E21.056, 257/E21.537, 257/E21.574, 257/E21.644, 257/E21.679, 257/E27.01
• US Class Current: 438/795
• CPC Class Codes: H01L 21/28185 with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/28202 in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
• CPC Class Codes: H01L 21/3225 Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering H01L21/3226 takes precedence
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

Abstract

A first thermal treatment, which is performed at a temperature within 650–750° C. for 30–240 minutes, and thereafter a second thermal treatment, which is performed at a temperature within 900–1100° C. for 30–120 minutes, are performed as the initial thermal treatments on a semiconductor wafer composed of silicon. Further, before forming a gate insulating film, the temperature is increased to 1000° C. at a temperature increasing rate of 8° C./min in a nitrogen ambient, and a thermal treatment is performed at a temperature of 1000° C. for 30 minutes as a third thermal treatment.

Claims

1. A semiconductor substrate composed of silicon, the semiconductor substrate having gettering sites composed of a bulk microdefect (BMD) layer formed at a predetermined depth from the surface of the semiconductor substrate by performing initial thermal treatments on the semiconductor substrate, but having no Denuded Zone (DZ) in an upper portion thereof, the initial thermal treatments including a first thermal treatment performed at a temperature within 650–

750°

C. for 30–

240 minutes and a second thermal treatment performed at a temperature within 900–

1100°

C. for 30–

120 minutes after the first thermal treatment,

wherein the predetermined depth is smaller than or equal to a diffusion distance of metal impurities to the gettering sites.

2. A semiconductor substrate composed of silicon, the semiconductor substrate on which top surface an epitaxial layer having a predetermined thickness is formed, the semiconductor substrate, on which the epitaxial layer is formed, having gettering sites composed of a bulk microdefect (BMD) layer formed below the epitaxial layer by performing initial thermal treatments on the semiconductor substrate, the initial thermal treatments including a first thermal treatment performed at a temperature within 650–

750°

C. for 30–

240 minutes and a second thermal treatment performed at a temperature within 900–

1100°

C. for 30–

120 minutes after the first thermal treatment,

wherein nitrogen atoms that function as precipitation nuclei of the gettering sites are added to the semiconductor substrate, and

the thickness of the epitaxial layer is smaller than or equal to a diffusion distance of metal impurities to the gettering sites.

3. A semiconductor substrate composed of silicon, the semiconductor substrate having gettering sites composed of a bulk microdefect (BMD) layer at a predetermined depth from the surface of the semiconductor substrate, but having no Denuded Zone (DZ) in an upper portion thereof, wherein the predetermined depth is smaller than or equal to a diffusion distance of metal impurities to the gettering sites.

4. A semiconductor substrate composed of silicon, the semiconductor substrate on which principal surface an epitaxial layer having a predetermined thickness is formed, and having gettering sites composed of a bulk microdefect (BMD) layer below the epitaxial layer,

wherein nitrogen atoms that function as precipitation nuclei of the gettering sites are added to the semiconductor substrate, and

the thickness of the epitaxial layer is smaller than or equal to a diffusion distance of metal impurities to the gettering sites.

5. A method for fabricating a semiconductor device comprising the steps of:

(a) performing a first thermal treatment at a temperature within 650–

750°

C. for 30–

240 minutes; and

(b) after the step (a), performing a second thermal treatment at a temperature within 900–

1100°

C. for 30–

120 minutes,

wherein the first and the second thermal treatments are a sequence of thermal treatments initially performed on a semiconductor substrate composed of silicon after the semiconductor substrate is introduced into a fabricating process, and the first and the second thermal treatments are performed seciuentially in the same heating apparatus, and

wherein in the step (b), gettering sites composed of a bulk microdefect (BMD) layer are formed at a predetermined depth from the surface of the semiconductor substrate, but no Denuded Zone (DZ) is formed in an upper portion of the semiconductor substrate.