Semiconductor device

• US 7,145,174 B2
• Filed: 03/12/2004
• Issued: 12/05/2006
• Est. Priority Date: 03/12/2004
• Status: Active Grant

• Current Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.), Oregon State University (Oregon University System)
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.), Oregon State University (Oregon University System)
• Inventors: Hong, David, Hoffman, Randy L., Dehuff, Nicole L., Chiang, Hai Q., Wager, John F.
• Primary Examiner(s): Jackson, Jerome
• Assistant Examiner(s): NGUYEN, JOSEPH H
• Application Number:
  US10/799,471
• Publication Number:
  US 20050199959A1
• Time in Patent Office: 998 Days
• Field of Search: 257/72, 257/59, 257/E21.387, 438/48, 438/128, 438/149, 438/151, 438/157, 438/283
• US Class Current: 257/59
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor device can include a channel including a zinc-indium oxide film.

Claims

1. A semiconductor device comprising:

a drain electrode;

a source electrode;

a channel contacting the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide having a single-phase crystalline state of Zn_xIn_2yO_x+3y, wherein x and y are each independently in the range of about 1 to about 15;

a gate electrode; and

a gate dielectric positioned between the gate electrode and the channel.

2. The semiconductor device of claim 1, wherein the channel includes being positioned between and electrically coupling the drain electrode and the source electrode.

3. The semiconductor device of claim 1, wherein at least one of the drain electrode, the source electrode, the channel, the gate electrode, and the gate dielectric is substantially transparent.

4. A semiconductor device comprising:

a drain electrode;

a source electrode;

a channel contacting the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide having a mixed-phase crystalline state formed from compounds selected from the group consisting of ZnO, Zn_xIn_2yO_x+3y, In₂O₃, and mixtures thereof;

a gate electrode; and

a gate dielectric positioned between the gate electrode and the channel.

5. The semiconductor device of claim 4, wherein zinc-indium oxide includes ZnO:

Zn_xIn_2yO_x+3y;

In₂O₃ in a ratio of A;

B;

C, wherein A, B, and C are each in a range of about 0.025 to about 0.95.

7. The semiconductor device of claim 5, wherein zinc-indium oxide includes an atomic composition of zinc and indium in a ratio of zinc(x):

indium(1−

x), wherein x is in the range of about 0.05 to about 0.95.

6. A semiconductor device comprising:

a drain electrode;

a source electrode;

a channel contacting the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide having an amorphous form from compounds selected from the group consisting of ZnO, Zn_xIn_2yO_x+3y, In₂O₃, and mixtures thereof;

a gate electrode; and

a gate dielectric positioned between the gate electrode and the channel.

8. A semiconductor device, comprising:

a drain electrode;

a source electrode;

means for a channel having a single-phase crystalline state of Zn_xIn_2yO_x+3y, wherein x and y are each independently in the range of about 1 to about 15, to electrically couple the drain electrode and the source electrode;

a gate electrode; and

a gate dielectric positioned between the gate electrode and the channel.

9. The semiconductor device of claim 8, wherein at least one of the drain electrode, the source electrode, the channel, the gate electrode, and the gate dielectric is substantially transparent.

10. A semiconductor device comprising:

a drain electrode;

a source electrode;

means for a channel having a mixed-phase crystalline state from compounds selected from the group consisting of ZnO, Zn_xIn_2yO_x+3y, In₂O₃, and mixtures thereof;

a gate electrode; and

a gate dielectric positioned between the gate electrode and the channel.

11. A semiconductor device comprising:

a drain electrode;

a source electrode;

means for a channel having an amorphous form from compounds selected from the group consisting of ZnO, Zn_xIn_2yO_x+3y, In₂O₃, and mixtures thereof;

a gate electrode; and

a gate dielectric positioned between the gate electrode and the channel.

12. A display device, comprising:

a plurality of pixel devices configured to operate collectively to display images, where each of the pixel devices includes a semiconductor device configured to control light emitted by the pixel device, the semiconductor device including;

a drain electrode;

a source electrode;

a channel contacting the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide having a single-phase crystalline state of Zn_xIn_2yO_x+3y, wherein x and y are each independently in the range of about 1 to about 15;

a gate electrode; and

a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel.

13. The display device of claim 12, wherein at least one of the drain electrode, the source electrode, the channel, the gate electrode, and the gate dielectric is substantially transparent.

14. A display device comprising:

a plurality of pixel devices configured to operate collectively to display images, where each of the pixel devices includes a semiconductor device configured to control light emitted by the pixel device, the semiconductor device including;

a drain electrode;

a source electrode;

a channel contacting the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide having a mixed-phase crystalline state formed from compounds selected from the group consisting of ZnO,Zn_xIn_2yO_x+3y, In₂O₃, and mixtures thereof;

a gate electrode; and

a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel.

15. The display device of claim 14, wherein zinc-indium oxide includes ZnO:

Zn_xIn_2yO_x+3y;

In₂O₃ in a ratio of A;

B;

C, wherein A, B, and C are each in a range of about 0.025 to about 0.95.

16. A display device of comprising:

a plurality of pixel devices configured to operate collectively to display images, where each of the pixel devices includes a semiconductor device configured to control light emitted by the pixel device, the semiconductor device including;

a drain electrode;

a source electrode;

a channel contacting the drain electrode and the source electrode, wherein the channel includes zinc-indium oxide having an amorphous form from compounds selected from the group consisting of ZnO,Zn_xIn_2yO_x+3y,In₂O₃, and mixtures thereof;

a gate electrode; and

a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel.

17. The display device of claim 16, wherein zinc-indium oxide includes an atomic composition of zinc and indium in a ratio of zinc(x):

indium(1−

x), wherein x is in the range of about 0.05 to about 0.95.