Semiconductor device with a solder creep-up prevention zone

• US 7,145,230 B2
• Filed: 12/30/2004
• Issued: 12/05/2006
• Est. Priority Date: 01/26/2004
• Status: Expired due to Fees

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Inventors: Hosoya, Futoshi
• Primary Examiner(s): Soward, Ida M.
• Application Number:
  US11/024,597
• Publication Number:
  US 20050161802A1
• Time in Patent Office: 705 Days
• Field of Search: 257708-711, 257729-731
• US Class Current: 257/708
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/73153 Bump and layer connectors
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 23/492 Bases or plates or solder therefor
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H05K 2201/10371 Shields or metal cases
• CPC Class Codes: H05K 2201/1084 Notched leads
• CPC Class Codes: H05K 2201/2081 : Compound repelling a metal, e.g. solder
• CPC Class Codes: H05K 3/341 : Surface mounted components
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product

Abstract

The present invention provides a semiconductor device which includes a U-shaped metal package base, and a semiconductor chip having at least surface electrodes and being mounted on the inner bottom portion of the U-shaped metal package base, wherein the metal package base has, in a portion thereof ranging from the opened side end portion of the inner side wall to the semiconductor chip, a creep-up preventive zone preventing solder entering from the opened side end portion from creeping up. The device makes it possible to solve problems which have been apprehended for conventional semiconductor devices configured as mounting a semiconductor chip on a small semiconductor package, in that reduction in distance between external terminal portions of the metal package and the semiconductor chip results in contact of a solder for mounting with the semiconductor chip to thereby adversely affect the electrical properties and reliability thereof, and in that resin filling or partial plating for avoiding intrusion of the solder raises the cost.

Claims

1. A semiconductor device, comprising:

a U-shaped metal package base; and

a semiconductor chip having at least one surface electrode and being mounted on an inner bottom portion of said U-shaped metal package base,

said metal package base including, in a portion thereof between an opened side end portion of an inner side wall and said semiconductor chip, a creep-up preventive zone preventing solder entering from said opened side end portion from creeping toward said semiconductor chip.

2. The semiconductor device according to claim 1, wherein said metal package base comprises a plated film formed thereon, but has no plated film at the position of said creep-up preventive zone.

3. The semiconductor device according to claim 1, wherein said semiconductor chip comprising one of said surface electrode, solder bumps and solder balls at a level almost equivalent to the level of said opened side end portion.

4. The semiconductor device according to claim 1, wherein a side surface of said semiconductor chip is not covered by a resin.

5. The semiconductor device according to claim 1, wherein said metal package base comprises an insulating resin zone provided thereon at the position of said creep-up preventive zone.

6. The semiconductor device according to claim 5, wherein said insulating resin zone comprises a lower edge aligned at the position between the surface of the semiconductor chip and the opened side end portion.

7. The semiconductor device according to claim 1, wherein said metal package base comprises a groove carved thereon at the position of said creep-up preventive zone.

8. The semiconductor device according to claim 7, wherein said groove is provided in the direction in parallel with the surface of said semiconductor chip.

9. The semiconductor device according to claim 8, wherein said groove comprises a sufficient volume capacity to prevent solder from creeping toward said semiconductor chip to enter said opened side end portion.

10. The semiconductor device according to claim 9, wherein a part of the solder flows into the groove.

11. The semiconductor device according to claim 7, wherein said groove is provided in the direction normal to the surface of said semiconductor chip, so as to reach said opened side end portion.

12. The semiconductor device according to claim 11, wherein said groove comprises a sufficient volume capacity to prevent solder from creeping toward said semiconductor chip to enter said opened side end portion.

13. The semiconductor device according to claim 7, wherein said groove comprises a lower edge aligned at the position between the surface of the semiconductor chip and the opened side end portion.

14. The semiconductor device according to claim 7, wherein said groove having a plated film at the inner surface thereof is formed in the position between a substantially equivalent height with a surface level of said semiconductor chip and said opened side end portion.

15. A semiconductor device, comprising:

a metal package base that mounts a semiconductor chip on an inner bottom portion of said metal package base and that mounts to a substrate at an opened side end portion of said metal package base,

wherein said metal package base includes, in a portion thereof between said opened side end portion of an inner side wall and said inner bottom portion, a creep-up preventive zone comprising a groove carved thereon for preventing solder entering from said opened side end portion and creeping toward said inner bottom portion of said metal package base.

16. A semiconductor device, comprising:

a metal package base that mounts a semiconductor chip on an inner bottom portion of said metal package base and that mounts to a substrate at an opened side end portion of said metal package base,

wherein said metal package base includes, in a portion thereof between said opened side end portion of an inner side wall and said inner bottom portion, a creep-up preventive zone comprising an insulating resin zone thereon for preventing solder entering from said opened side end portion and creeping toward said inner bottom portion of said metal package base.