System and method for determining maximum operational parameters used in maskless applications
First Claim
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1. A lithography system, comprising:
- an illumination source that supplies a beam of radiation;
a pattern generator that patterns the beam of radiation;
a projection system that projects the patterned beam onto a target portion of a substrate supported by a stage during an exposure operation; and
a control module coupled to at least one of the illumination source, the pattern generator, and the stage, wherein the control module reduces an amount of data in a datapath and determines a maximum operational parameter for at least one of the illumination source, the pattern generator, and the stage based on the reduced amount of data.
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Abstract
A lithographic method and apparatus used to pattern an object. An illumination source supplies a beam of radiation. A pattern generator forms a pattern to pattern a beam of radiation using the pattern data. A projection system projects the patterned beam onto a target portion of a substrate supported by a stage during an exposure operation. A control module determines a respective maximum operational parameter for the illumination source, the pattern generator, and/or the stage.
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Citations
15 Claims
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1. A lithography system, comprising:
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an illumination source that supplies a beam of radiation; a pattern generator that patterns the beam of radiation; a projection system that projects the patterned beam onto a target portion of a substrate supported by a stage during an exposure operation; and a control module coupled to at least one of the illumination source, the pattern generator, and the stage, wherein the control module reduces an amount of data in a datapath and determines a maximum operational parameter for at least one of the illumination source, the pattern generator, and the stage based on the reduced amount of data. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for using a maskless lithography system, comprising:
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(a) reducing an amount of data in a datapath and determining a maximum value for at least one operational parameter of the maskless lithography system before an exposure operation based on the reduced amount of data; (b) using the maximum value of the at least one operational parameter determined in step (a) to set the at least one operational parameter of the maskless lithography system; (c) patterning a beam of radiation using a pattern generator of the maskless lithography system; and (d) projecting the patterned beam of radiation onto a target portion of a substrate supported by a stage during the exposure operation. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification