System and method for determining maximum operational parameters used in maskless applications

• US 7,145,636 B2
• Filed: 12/28/2004
• Issued: 12/05/2006
• Est. Priority Date: 12/28/2004
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Hoeks, Martinus Hendricus
• Primary Examiner(s): Nguyen, Henry Hung
• Application Number:
  US11/022,925
• Publication Number:
  US 20060139588A1
• Time in Patent Office: 707 Days
• Field of Search: 355/52, 355/53, 355/55, 355/67, 430/5, 430/20, 430/30, 250/548, 356399-401
• US Class Current: 355/53
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
• CPC Class Codes: G03F 7/70508 Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus

Abstract

A lithographic method and apparatus used to pattern an object. An illumination source supplies a beam of radiation. A pattern generator forms a pattern to pattern a beam of radiation using the pattern data. A projection system projects the patterned beam onto a target portion of a substrate supported by a stage during an exposure operation. A control module determines a respective maximum operational parameter for the illumination source, the pattern generator, and/or the stage.

Claims

1. A lithography system, comprising:

an illumination source that supplies a beam of radiation;

a pattern generator that patterns the beam of radiation;

a projection system that projects the patterned beam onto a target portion of a substrate supported by a stage during an exposure operation; and

a control module coupled to at least one of the illumination source, the pattern generator, and the stage, wherein the control module reduces an amount of data in a datapath and determines a maximum operational parameter for at least one of the illumination source, the pattern generator, and the stage based on the reduced amount of data.

2. The system of claim 1, wherein the one or more maximum operational parameters comprise a frequency of the illumination source, a scan speed of the pattern generator, and a stage speed of the stage.

3. The system of claim 1, wherein the maximum operational parameter of the pattern generator comprise at least one of a data rate, a decompression capacity, and a rendering capacity.

4. The system of claim 1, wherein the control module comprises:

a converter that converts an image data set to a pattern data set; and

a compressor that compresses the pattern data set and calculates the one or more respective maximum operational parameters, which are associated as meta-information with the pattern data.

5. The system of claim 4, wherein the one or more maximum operational parameters are calculated before the exposure operation.

6. The system of claim 1, wherein the control module comprises:

an analyzer that analyzes the image data set and calculates the one or more maximum operational parameters.

7. The system of claim 6, wherein the one or more maximum operational parameters are used to perform a test exposure.

8. The system of claim 7, wherein the one or more maximum operational parameters are adjusted based on the test exposure.

9. The system of claim 1, wherein the substrate is one of a flat panel display substrate and semiconductor wafer.

10. A method for using a maskless lithography system, comprising:

(a) reducing an amount of data in a datapath and determining a maximum value for at least one operational parameter of the maskless lithography system before an exposure operation based on the reduced amount of data;

(b) using the maximum value of the at least one operational parameter determined in step (a) to set the at least one operational parameter of the maskless lithography system;

(c) patterning a beam of radiation using a pattern generator of the maskless lithography system; and

(d) projecting the patterned beam of radiation onto a target portion of a substrate supported by a stage during the exposure operation.

11. The method of claim 10, further comprising:

using at least one of a frequency of a beam of radiation, a scan speed of the pattern generator, and a stage speed of the stage as the at least one operational parameter.

12. The method of claim 10, further comprising:

using at least one of a data rate, a decompression capacity, and a rendering capacity as the operational parameter of the pattern generator.

13. The method of claim 10, wherein step (a) comprises:

compressing a pattern data set; and

calculating the one or more maximum values based on the compression of the pattern data set.

14. The method of claim 10, wherein step (a) comprises:

analyzing an image data set; and

calculating the one or more maximum values based on the analysis of the image data.

15. The method of claim 10, wherein step (a) further comprises:

using the one or more maximum values to perform a test exposure; and

adjusting the one or more maximum values based on the test exposure.