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System and method for determining maximum operational parameters used in maskless applications

  • US 7,145,636 B2
  • Filed: 12/28/2004
  • Issued: 12/05/2006
  • Est. Priority Date: 12/28/2004
  • Status: Active Grant
First Claim
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1. A lithography system, comprising:

  • an illumination source that supplies a beam of radiation;

    a pattern generator that patterns the beam of radiation;

    a projection system that projects the patterned beam onto a target portion of a substrate supported by a stage during an exposure operation; and

    a control module coupled to at least one of the illumination source, the pattern generator, and the stage, wherein the control module reduces an amount of data in a datapath and determines a maximum operational parameter for at least one of the illumination source, the pattern generator, and the stage based on the reduced amount of data.

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