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Plasma processing apparatus and plasma processing method

  • US 7,147,747 B2
  • Filed: 03/04/2003
  • Issued: 12/12/2006
  • Est. Priority Date: 03/04/2003
  • Status: Expired due to Fees
First Claim
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1. A plasma processing apparatus having a process chamber in which substrates are subjected to plasma processing in lots comprising;

  • a light-receiving part for monitoring a plasma emission in said process chamber;

    a spectrometer unit for performing a spectrometry on said plasma emission and to convert the same into a multi-channel signal;

    an arithmetic unit for performing principal component analysis on the multi-channel signal for each substrate to obtain an average of principal component scores (Pij for j-th substrate of i-th lot);

    a database for storing a filter vector for obtaining the principal component scores;

    first means to determine a difference (Di,j=Pi,j

    Pi-1,j) of average principal component scores of a substrate in a lot compared to that of a substrate in an identical position in the previous lot;

    second means to determine an average, a difference of minimum and maximum, and a standard deviation of (Dij) for all substrates in a lot;

    third means to compare the average, the difference of minimum and maximum, and the standard deviation, as determined, with preset thresholds to determine an end point of seasoning; and

    a controller for controlling an operation of said plasma processing apparatus.

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