Chip interconnect and packaging deposition methods and structures
First Claim
1. A method of electroplating a metal in a feature formed in a substrate, the substrate having a top surface, the feature having a bottom and sidewalls, the method comprising:
- depositing a barrier layer on the top surface of the substrate and the bottom and sidewalls of the feature;
depositing a seed layer of the metal on the barrier layer;
removing the seed layer from the top surface of the substrate, thereby exposing the barrier layer on the top surface of the substrate and leaving the seed layer on the sidewalls and on the bottom of the feature;
during the removing, applying an electrical potential between the substrate and an electrode; and
electroplating the metal on the seed layer so that the metal fills the feature with substantially no electroplating on the top surface.
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Abstract
The present invention relates to a method for fabricating high performance chip interconnects and packages by providing methods for depositing a conductive material in cavities of a substrate in a more efficient and time saving manner. This is accomplished by selectively removing portions of a seed layer from a top surface of a substrate and then depositing a conductive material in the cavities of the substrate, where portions of the seed layer remains in the cavities. Another method includes forming an oxide layer on the top surface of the substrate such that the conductive material can be deposited in the cavities without the material being formed on the top surface of the substrate. The present invention also discloses methods for forming multi-level interconnects and the corresponding structures.
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Citations
30 Claims
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1. A method of electroplating a metal in a feature formed in a substrate, the substrate having a top surface, the feature having a bottom and sidewalls, the method comprising:
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depositing a barrier layer on the top surface of the substrate and the bottom and sidewalls of the feature; depositing a seed layer of the metal on the barrier layer; removing the seed layer from the top surface of the substrate, thereby exposing the barrier layer on the top surface of the substrate and leaving the seed layer on the sidewalls and on the bottom of the feature; during the removing, applying an electrical potential between the substrate and an electrode; and electroplating the metal on the seed layer so that the metal fills the feature with substantially no electroplating on the top surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of electroplating a metal on a substrate including a feature having a bottom and sidewalls, the substrate having a barrier layer and a seed layer deposited on a top surface of the substrate and on the bottom and the sidewalls of the feature, the method comprising:
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removing the seed layer from the top surface of the substrate, thereby exposing the barrier layer on the top surface of the substrate and leaving the seed layer on the sidewalls and on the bottom of the feature; during the removing, applying an electrical potential between the substrate and an electrode; and electroplating the metal on the seed layer so that the metal fills the feature, with substantially no electroplating on the top surface. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification