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Vertical semiconductor devices or chips and method of mass production of the same

  • US 7,148,075 B2
  • Filed: 06/05/2004
  • Issued: 12/12/2006
  • Est. Priority Date: 06/05/2004
  • Status: Expired due to Fees
First Claim
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1. A method for manufacturing vertical semiconductor chips or devices, comprises process steps, in the order presented:

  • providing a substrate;

    growing a first-type cladding layer on said substrate;

    disposing a second intermediate layer on said first-type cladding layer;

    disposing an electrically conductive supporting plate on said second intermediate layer to form a bonded wafer;

    removing said substrate from said bonded wafer so that said first-type cladding layer exposed;

    growing an epitaxial layer on said first-type cladding layer;

    wherein said epitaxial layer comprising an active layer which emits light and a second-type cladding layer;

    disposing a patterned second-electrode on said second-type cladding layer, wherein said patterned second-electrode comprising at least one wire bonding pad.

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