Vertical semiconductor devices or chips and method of mass production of the same
First Claim
1. A method for manufacturing vertical semiconductor chips or devices, comprises process steps, in the order presented:
- providing a substrate;
growing a first-type cladding layer on said substrate;
disposing a second intermediate layer on said first-type cladding layer;
disposing an electrically conductive supporting plate on said second intermediate layer to form a bonded wafer;
removing said substrate from said bonded wafer so that said first-type cladding layer exposed;
growing an epitaxial layer on said first-type cladding layer;
wherein said epitaxial layer comprising an active layer which emits light and a second-type cladding layer;
disposing a patterned second-electrode on said second-type cladding layer, wherein said patterned second-electrode comprising at least one wire bonding pad.
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Abstract
The vertical semiconductor chips or devices have all of advantages of flip chip technique and without its disadvantages. The present invention discloses methods of mass production of the vertical semiconductor chips or devices comprising GaN, GaInP, and GaInNP based LEDs with higher crystal quality, higher throughput, higher yield, and lower cost. The methods comprise the following process steps in the order presented: growing a first-type cladding layer, disposing a reflector/Ohmic layer, disposing a second intermediate layer, disposing an electrically conductive supporting plate, removing the original substrate and the first-type cladding layer exposed, growing an epitaxial layer comprising an active layer and a second-type cladding layer, disposing a second-electrode, and dicing into individual dies.
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Citations
11 Claims
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1. A method for manufacturing vertical semiconductor chips or devices, comprises process steps, in the order presented:
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providing a substrate; growing a first-type cladding layer on said substrate; disposing a second intermediate layer on said first-type cladding layer; disposing an electrically conductive supporting plate on said second intermediate layer to form a bonded wafer; removing said substrate from said bonded wafer so that said first-type cladding layer exposed; growing an epitaxial layer on said first-type cladding layer;
wherein said epitaxial layer comprising an active layer which emits light and a second-type cladding layer;disposing a patterned second-electrode on said second-type cladding layer, wherein said patterned second-electrode comprising at least one wire bonding pad. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification