Memory structure and method making
First Claim
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1. A method comprising forming a plurality of row conductors to intersect with a plurality of column conductors at a plurality of intersections, each said intersection including an electrically linear resistive element in series with an unpatterned voltage breakdown element.
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Abstract
A memory structure has a plurality of row conductors intersecting a plurality of column conductors at a plurality of intersections. Each intersection includes an electrically linear resistive element in series with a voltage breakdown element.
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Citations
17 Claims
- 1. A method comprising forming a plurality of row conductors to intersect with a plurality of column conductors at a plurality of intersections, each said intersection including an electrically linear resistive element in series with an unpatterned voltage breakdown element.
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