Reducing the dielectric constant of a portion of a gate dielectric
First Claim
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1. A method comprising:
- reducing a dielectric constant of only a vertical portion of a metal oxide gate dielectric having a horizontal portion and the vertical portion, said horizontal portion contacting a semiconductor substrate.
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Abstract
In a metal gate replacement process, a cup-shaped gate metal oxide dielectric may have a vertical portion that may be exposed to a silicon ion implantation. As a result of the implantation, the dielectric constant of a vertical portion may be reduced, reducing fringe capacitance.
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Citations
13 Claims
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1. A method comprising:
reducing a dielectric constant of only a vertical portion of a metal oxide gate dielectric having a horizontal portion and the vertical portion, said horizontal portion contacting a semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method comprising:
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forming a polysilicon gate electrode over a gate dielectric; forming a sidewall spacer on said polysilicon gate electrode; removing said gate dielectric and polysilicon gate electrode; forming a metal oxide gate dielectric on said sidewall spacer, said metal oxide gate dielectric having a horizontal portion and a vertical portion, said vertical portion contacting said sidewall spacer; forming a metal gate electrode over said metal oxide gate dielectric; and reducing a dielectric constant of the vertical portion of said metal oxide gate dielectric. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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Specification