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Method for forming polysilicon floating gate

  • US 7,148,105 B2
  • Filed: 12/15/2004
  • Issued: 12/12/2006
  • Est. Priority Date: 06/26/2002
  • Status: Expired due to Term
First Claim
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1. A method for forming a polysilicon floating gate during the manufacture of a floating gate memory cell using a deposition process, comprising:

  • selecting a reaction gas and a second gas for forming the floating gate during the deposition process consisting essentially of a reaction gas SiX or Si2Y or a combination thereof, and a second gas Z;

    selecting a flow rate ratio for the reaction gas to the second gas of 1/5 to 1/20; and

    forming a microcrystalline polysilicon floating gate using said selected reaction gas/second gas.

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