Method for forming polysilicon floating gate
First Claim
Patent Images
1. A method for forming a polysilicon floating gate during the manufacture of a floating gate memory cell using a deposition process, comprising:
- selecting a reaction gas and a second gas for forming the floating gate during the deposition process consisting essentially of a reaction gas SiX or Si2Y or a combination thereof, and a second gas Z;
selecting a flow rate ratio for the reaction gas to the second gas of 1/5 to 1/20; and
forming a microcrystalline polysilicon floating gate using said selected reaction gas/second gas.
0 Assignments
0 Petitions
Accused Products
Abstract
A floating gate memory cell comprises a substrate with a drain and a source separated by a channel, a floating gate separated from the channel by a first insulation layer, and a control gate separated from the floating gate by a second insulation layer. The deposition environment is chosen so that the grain size of at least a portion of the floating gate opposite the first insulation layer is about 50–500 Å.
30 Citations
33 Claims
-
1. A method for forming a polysilicon floating gate during the manufacture of a floating gate memory cell using a deposition process, comprising:
-
selecting a reaction gas and a second gas for forming the floating gate during the deposition process consisting essentially of a reaction gas SiX or Si2Y or a combination thereof, and a second gas Z; selecting a flow rate ratio for the reaction gas to the second gas of 1/5 to 1/20; and forming a microcrystalline polysilicon floating gate using said selected reaction gas/second gas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 29, 32, 33)
-
-
19. A method for forming a polysilicon floating gate during the manufacture of a floating gate memory cell using a deposition process, comprising:
-
selecting a reaction gas and a second gas for forming the floating gate during the deposition process consisting essentially of a reaction gas SiX and a second gas Y; the selecting step being carried out with X comprising at least one of;
H4, H2Cl2, HCl3, D4, D2Cl2, D3Cl and Y comprising at least one of;
D2, H2, D3;selecting a flow rate ratio for the reaction gas to the second gas of 1/5 to 1/20; and forming a microcrystalline polysilicon floating gate using said selected reaction gas/second gas. - View Dependent Claims (20, 21, 22, 23, 30)
-
-
24. A method for forming a polysilicon floating gate during the manufacture of a floating gate memory cell using a deposition process, comprising:
-
selecting a reaction gas and a second gas for forming the floating gate during the deposition process consisting essentially of a reaction gas Si2X and a second gas Y; the selecting step being carried out with X comprising at least one of;
H6, H4Cl2, H2Cl4, D6, D4Cl2, D2Cl4 and Y comprising at least one of;
D2, H2, D3;selecting a flow rate ratio for the reaction gas to the second gas of 1/5 to 1/20; and forming a microcrystalline polysilicon floating gate using said selected reaction gas/second gas. - View Dependent Claims (25, 26, 27, 28, 31)
-
Specification