Semiconductor device and fabricating method thereof
First Claim
1. A fabrication method for a semiconductor device, comprising:
- forming a gate dielectric layer on a substrate;
forming a plurality of gate structures on the substrate, wherein each gate structure is separated by a first dielectric layer, and comprises a gate conductive layer, a cap layer and a spacer;
forming a mask layer on the substrate to cover some of the gate structures;
removing the cap layer and the spacer of the gate structures that are not covered by the mask layer, wherein a gap is formed between the gate and the first dielectric layer;
removing the mask layer; and
depositing a second dielectric layer on the substrate to cover the gate structures, thereby forming voids in the second dielectric layer and in the gap.
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Abstract
A method for fabricating a semiconductor device is described. A gate dielectric layer is formed on a substrate, and several gate structures having a gate conductor, a cap layer and spacers are formed on the gate dielectric layer. A mask layer is formed over the substrate covering a portion of the gate structures. Removing the cap layer and spacers that are not covered by the mask layer. After the mask layer is removed, a dielectric layer is formed over the substrate covering the gate structures. A self-aligned contact hole is formed in the dielectric layer. A conductive layer is formed in the self-aligned contact hole and on the dielectric layer. Since the cap layer and spacers that are not covered by the mask layer are removed and substituted by the dielectric layer having lower dielectric constant property, the parasitic capacitance can be reduced.
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Citations
13 Claims
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1. A fabrication method for a semiconductor device, comprising:
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forming a gate dielectric layer on a substrate; forming a plurality of gate structures on the substrate, wherein each gate structure is separated by a first dielectric layer, and comprises a gate conductive layer, a cap layer and a spacer; forming a mask layer on the substrate to cover some of the gate structures; removing the cap layer and the spacer of the gate structures that are not covered by the mask layer, wherein a gap is formed between the gate and the first dielectric layer; removing the mask layer; and depositing a second dielectric layer on the substrate to cover the gate structures, thereby forming voids in the second dielectric layer and in the gap. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A fabrication method for a semiconductor device, comprising:
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forming a gate dielectric layer on a substrate; forming a plurality of gate structures on the substrate, wherein each gate structure comprises a gate conductive layer, a cap layer and a spacer; filling a first dielectric layer in between the gate structures; forming a self-aligned contact in the first dielectric layer in between two of the gate structures; removing the cap layer and the spacer of the gate structures to form a gap at a sidewall of the gate structures; and forming a second dielectric layer on the first dielectric layer, thereby forming voids in the second dielectric layer and in the gap. - View Dependent Claims (10, 11, 12, 13)
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Specification