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Semiconductor device and fabricating method thereof

  • US 7,148,113 B2
  • Filed: 07/19/2005
  • Issued: 12/12/2006
  • Est. Priority Date: 08/25/2003
  • Status: Active Grant
First Claim
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1. A fabrication method for a semiconductor device, comprising:

  • forming a gate dielectric layer on a substrate;

    forming a plurality of gate structures on the substrate, wherein each gate structure is separated by a first dielectric layer, and comprises a gate conductive layer, a cap layer and a spacer;

    forming a mask layer on the substrate to cover some of the gate structures;

    removing the cap layer and the spacer of the gate structures that are not covered by the mask layer, wherein a gap is formed between the gate and the first dielectric layer;

    removing the mask layer; and

    depositing a second dielectric layer on the substrate to cover the gate structures, thereby forming voids in the second dielectric layer and in the gap.

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