Process for production of semiconductor substrate

• US 7,148,119 B1
• Filed: 09/29/1998
• Issued: 12/12/2006
• Est. Priority Date: 03/10/1994
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Sakaguchi, Kiyofumi, Yonehara, Takao
• Primary Examiner(s): FOURSON III, GEORGE R
• Application Number:
  US09/161,774
• Time in Patent Office: 2,996 Days
• Field of Search: 438/406, 438/455, 438/458, 438/FOR.104, 438/FOR.106, 438/409, 438/466, 148/DIG.12, 257/E21.57
• US Class Current: 438/406
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 21/76259 with separation/delamination along a porous layer
• CPC Class Codes: H01L 2221/68363 used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate

Abstract

A process for producing a semiconductor substrate is provided which comprises steps of forming a porous layer on a first substrate, forming a nonporous monocrystalline semiconductor layer on the porous layer of the first substrate, bonding the nonporous monocrystalline layer onto a second substrate, separating the bonded substrates at the porous layer, removing the porous layer on the second substrate, and removing the porous layer constituting the first substrate.

Claims

1. A method for separating a semiconductor layer from a substrate, comprising:

forming a porous layer on a surface of a substrate by an anodic oxidization;

forming at least one semiconductor layer on said porous layer; and

separating said semiconductor layer from said substrate by forming a mechanical rupture in said porous layer.

2. A method for separating a semiconductor layer from a substrate according to claim 1, wherein said substrate is a Si substrate.

3. A method for separating a semiconductor layer from a substrate according to claim 1, wherein said porous layer is a Si porous layer.

4. A method for separating a semiconductor layer from a substrate according to claim 1, wherein the method further comprises a step of oxidizing said porous layer after forming said porous layer.

5. A method for separating a semiconductor layer from a substrate according to claim 4, wherein said porous layer is oxidized at a temperature of 400°

.

7. The method for separating a semiconductor layer from a substrate according to claim 1 or 6 wherein the method further comprises slightly etching an end face of the porous layer to facilitate the subsequent separation of the semiconductor layer from the substrate.

8. A method according to claim 1, wherein said at least one semiconductor layer is formed by epitaxial growth using Chemical Vapor Deposition.

6. A method for separating a semiconductor layer from a substrate comprising:

forming a porous layer on a surface of a substrate;

oxidizing said porous layer;

forming at least one semiconductor layer on said porous layer;

separating said semiconductor layer from said substrate by forming a mechanical rupture within said porous layer.