Method for fabricating nitride-based compound semiconductor element

• US 7,148,149 B2
• Filed: 12/22/2004
• Issued: 12/12/2006
• Est. Priority Date: 12/24/2003
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Ueda, Tetsuzo, Ohno, Hiroshi, Tamura, Satoshi
• Primary Examiner(s): Norton, Nadine G.
• Assistant Examiner(s): UMEZ ERONINI, LYNETTE T
• Application Number:
  US11/017,681
• Publication Number:
  US 20050159000A1
• Time in Patent Office: 720 Days
• Field of Search: 438/704, 438/706, 438/745, 438/718
• US Class Current: 438/704
• CPC Class Codes: H01L 21/30612 Etching of AIIIBV compounds
• CPC Class Codes: H01L 21/30621 Vapour phase etching
• CPC Class Codes: H01L 21/30635 of AIIIBV compounds
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 33/0075 comprising nitride compounds

Abstract

A method for fabricating a nitride semiconductor element according to the present invention comprises the steps of: forming a nitride semiconductor layer 13 on a base substrate 11; forming, on part of the upper surface of the nitride semiconductor layer 13, a conductive film 14 made of an electron emitting layer 14b and a dry etching mask layer 14a from bottom to top; performing dry etching on the nitride semiconductor layer 13; and performing wet etching on the nitride semiconductor layer 13 by emitting electrons from the nitride semiconductor layer 13 through the conductive film 14 to the outside.

Claims

1. A method for fabricating a nitride-based compound semiconductor element, comprising the steps of:

forming a nitride-based compound semiconductor layer on a base substrate;

forming a conductive film as an etching mask on part of the surface of the nitride-based compound semiconductor layer;

performing dry etching on the nitride-based compound semiconductor layer; and

performing wet etching on the nitride-based compound semiconductor layer by emitting electrons from the nitride-based compound semiconductor layer through the conductive film to the outside, the wet etching being performed without applying an external voltage to the conductive film and without radiating the nitride-based compound semiconductor layer with ultraviolet light,

wherein in the step of performing dry etching, a damaged layer is created in the nitride-based compound semiconductor layer, and

in the step of performing wet etching, the damaged layer is removed.

3. The method of claim 1, wherein the conductive film includes a layer containing Ni.

4. The method of claim 1 or 2, wherein the nitride-based compound semiconductor layer is provided with at least a single layer containing Al, and the dry etching is performed on the layer containing Al.

8. The method of claim 1, wherein the conductive film has a layer containing Ti and Au or a layer containing Ti and Pt.

9. The method of any one of claims 1, 2 and 5,

wherein the nitride-based compound semiconductor layer is formed of a plurality of layers, and

the plurality of layers are formed of a plurality of nitride-based semiconductors having different element compositions, respectively.

10. The method of any one of claims 1, 2 and 5, wherein the wet etching uses a solution containing one of KOH, NaOH, H₃PO₄, H₂SO₄, and HCl.

11. The method of any one of claims 1, 2 and 5, wherein in the step of performing wet etching, the nitride-based compound semiconductor layer is radiated with ultrasonic waves.

12. The method of any one of claims 1, 2 and 5, wherein another nitride-based compound semiconductor layer is provided on the nitride-based compound semiconductor layer subjected to the wet etching.

2. A method for fabricating a nitride-based compound semiconductor element, comprising the steps of:

forming a nitride-based compound semiconductor layer on a base substrate;

forming, on part of the surface of the nitride-based compound semiconductor layer, a multilayer conductive film in which an uppermost layer is a dry etching mask layer and a layer lower than the dry etching mask layer is a layer for electron emitting;

performing dry etching on the nitride-based compound semiconductor layer;

removing the dry etching mask layer; and

performing wet etching on the nitride-based compound semiconductor layer by emitting electrons from the nitride-based compound semiconductor layer through the layer for electron emitting to the outside, the wet etching being performed without applying an external voltage to the layer for electron emitting and without radiating the nitride-based compound semiconductor layer with ultraviolet light,

wherein in the step of performing dry etching, a damaged layer is created in the nitride-based compound semiconductor layer, and

in the step of performing wet etching, the damaged layer is removed.

13. The method of claim 2,

wherein a Ni layer is used as the dry etching mask layer, and

a layer comprising Au or Pt is used as the layer for electron emitting.

5. A method for fabricating a nitride-based compound semiconductor element, comprising the steps of:

forming a nitride-based compound semiconductor layer comprising a multilayer whose uppermost layer is a n-type nitride-based compound semiconductor layer on a base substrate;

forming, on part of the surface of the n-type nitride-based compound semiconductor layer, a conductive film as an electron emitting film for emitting electrons from the n-type nitride-based compound semiconductor layer to the outside; and

performing wet etching on the n-type nitride-based compound semiconductor layer by emitting electrons from the n-type nitride-based compound semiconductor layer through the conductive film to the outside, the wet etching being performed without applying an external voltage to the conductive film while radiating the n-type nitride-based compound semiconductor layer with ultraviolet light,

wherein the wet etching is performed on the n-type nitride-based compound semiconductor layer without performing dry etching.

6. The method of claim 5, wherein the nitride-based compound semiconductor layer is formed of a plurality of layers in which a layer lower than the n-type nitride-based compound semiconductor layer is a p-type nitride-based compound semiconductor layer, and

in the step of performing wet etching, the p-type nitride-based compound semiconductor layer serves as a layer for stopping wet etching.

7. The method of claim 6, wherein the n-type nitride-based compound semiconductor layer is an AlGaN layer.

14. The method of claim 5,

wherein a layer comprising Ti and Pt is used as the conductive film.