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Sequential deposition/anneal film densification method

  • US 7,148,155 B1
  • Filed: 10/26/2004
  • Issued: 12/12/2006
  • Est. Priority Date: 10/26/2004
  • Status: Active Grant
First Claim
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1. A method of forming a densified dielectric film, the method comprising:

  • (a) depositing a thin layer of a silicon oxide-based dielectric film layer on the substrate;

    (b) annealing the dielectric film layer to remove water and fully densify the layer, wherein the annealing comprises a treatment selected from the group consisting of a low temperature oxygen-containing inductively coupled high density plasma (HDP)-based treatment, a furnace-based thermal treatment, and a microwave plasma-based treatment; and

    (c) repeating (a) and (b) at least once to form a densified dielectric film;

    wherein the thickness of the dielectric film layer formed in (a) is insufficient to prevent substantially complete penetration of the annealing agent into the layer and migration of water out of the layer.

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