Semiconductor device having thin film transistor with position controlled channel formation region
First Claim
1. A semiconductor device comprising:
- an insulating film having a depression portion and a projection portion; and
a thin film transistor having a channel formation region that is placed only between a center and an edge of the depression portion of the insulating film.
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Abstract
A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.
99 Citations
72 Claims
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1. A semiconductor device comprising:
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an insulating film having a depression portion and a projection portion; and a thin film transistor having a channel formation region that is placed only between a center and an edge of the depression portion of the insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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an insulating film having a depression portion and a projection portion; and a thin film transistor having a channel formation region over the depression portion that is not placed over a midpoint of the depression portion of the insulating film. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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an insulating film having a depression portion and a projection portion; and a thin film transistor having a channel formation region that is placed only between a center and an edge of the projection portion of the insulating film. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
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23. A semiconductor device comprising:
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an insulating film having a depression portion and a projection portion; and a thin film transistor having a channel formation region over the projection portion that is not placed over a midpoint of the projection portion of the insulating film. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30)
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31. A semiconductor device comprising:
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an insulating film having a rectangular or stripe pattern depression portion and projection portion; and a thin film transistor having a channel formation region that is placed only between a center and an edge of the depression portion of the insulating film. - View Dependent Claims (32, 33, 34, 35, 36, 37)
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38. A semiconductor device comprising:
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an insulating film having a rectangular or stripe pattern depression portion and projection portion; and a thin film transistor having a channel formation region over the depression portion that is not placed over a midpoint of the depression portion of the insulating film. - View Dependent Claims (39, 40, 41, 42, 43, 44)
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45. A semiconductor device comprising:
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an insulating film having a rectangular or stripe pattern depression portion and projection portion; and a thin film transistor having a channel formation region that is placed only between a center and an edge of the projection portion of the insulating film. - View Dependent Claims (46, 47, 48, 49, 50, 51)
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52. A semiconductor device comprising:
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an insulating film having a rectangular or stripe pattern depression portion and projection portion; and a thin film transistor having a channel formation region over the projection portion that is not placed over a midpoint of the projection portion of the insulating film. - View Dependent Claims (53, 54, 55, 56, 57, 58)
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59. A semiconductor device comprising:
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an insulating film having a depression portion and a projection portion; a first thin film transistor having a channel formation region that is placed only between a center and an edge of the depression portion of the insulating film; and a second thin film transistor over the first thin film transistor. - View Dependent Claims (60, 61, 62, 63, 64, 65)
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66. A semiconductor device comprising:
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an insulating film having a depression portion and a projection portion; a first thin film transistor having a channel formation region over the depression portion that is not placed over a midpoint of the depression portion of the insulating film; and a second thin film transistor over the first thin film transistor. - View Dependent Claims (67, 68, 69, 70, 71, 72)
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Specification