Semiconductor device with inductive component and method of making
First Claim
Patent Images
1. An integrated circuit, comprising:
- a low resistivity semiconductor substrate having a dielectric region formed therein, a trench defined in the dielectric region and including dielectric sidewalls, and an adjacent cavity defined at least partially by the substrate;
an electroplated conductive material disposed within the trench to produce an inductance having sides and a bottom, the sides of the inductance being bounded by the dielectric sidewalls and the cavity being adjacent the bottom; and
a bottom surface of the semiconductor substrate defining a first recessed region underlying the dielectric region.
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Abstract
An integrated circuit (10) includes a semiconductor substrate (11) that has a top surface (32) for forming a dielectric region (14) with a trench (40) and one or more adjacent cavities (16). A conductive material such as copper is disposed within the trench to produce an inductor (50). A top surface (49) of the inductor is substantially coplanar with an interconnect surface (31) of the semiconductor substrate, which facilitates connecting to the inductor with standard integrated circuit metallization (57).
35 Citations
17 Claims
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1. An integrated circuit, comprising:
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a low resistivity semiconductor substrate having a dielectric region formed therein, a trench defined in the dielectric region and including dielectric sidewalls, and an adjacent cavity defined at least partially by the substrate; an electroplated conductive material disposed within the trench to produce an inductance having sides and a bottom, the sides of the inductance being bounded by the dielectric sidewalls and the cavity being adjacent the bottom; and a bottom surface of the semiconductor substrate defining a first recessed region underlying the dielectric region. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An integrated circuit comprising:
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a low resistivity, semiconductor substrate including an active region and a dielectric region; at least one active component positioned in the active region; a trench formed in the dielectric region and including side-walls defined by low dielectric constant material; high conductivity electroplated material in the trench and defining at least a portion of a passive electronic component; and wherein the low dielectric constant material includes dielectric material defining an array of cavities therein, the dielectric material having a first dielectric constant and the cavities providing a second dielectric constant lower than the first dielectric constant to form an effective dielectric constant lower than the first dielectric constant. - View Dependent Claims (8, 9)
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10. An integrated circuit comprising:
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a low resistivity, semiconductor substrate including an active region and a dielectric region; at least one active component positioned in the active region; a trench formed in the dielectric region and including side-walls defined by low dielectric constant material; high conductivity electroplated material in the trench and defining at least a portion of a passive electronic component; and wherein the low dielectric constant material includes dielectric material defining an array of cavities therein, the dielectric material having a first dielectric constant and the cavities providing a second dielectric constant lower than the first dielectric constant to form an effective dielectric constant lower than the first dielectric constant, wherein the dielectric material and the array of cavities produce an effective dielectric constant at least ten percent lower than the first dielectric constant. - View Dependent Claims (11)
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12. An integrated circuit comprising:
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a low resistivity, semiconductor substrate including an active region and a dielectric region; at least one active component positioned in the active region; a trench formed in the dielectric region and including side-walls defined by low dielectric constant material; high conductivity electroplated material in the trench and defining at least a portion of a passive electronic component; and further including a cavity at least partially defined by the substrate in the dielectric region and in communication with a lower portion of the high conductivity, electroplated material in the trench. - View Dependent Claims (13)
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14. An integrated circuit comprising:
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a low resistivity, semiconductor substrate including an active region and a dielectric region; at least one active component positioned in the active region; an elongated trench formed in the dielectric region and including side-walls defined by low dielectric constant material; high conductivity material in the trench and defining at least a portion of an inductive component; and a sealed cavity at least partially defined by the substrate in the dielectric region and in communication with a lower portion of the high conductivity material in the trench. - View Dependent Claims (15, 16, 17)
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Specification